Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Mobile Display Co., Ltd.

Ji-Yong Park

Jae-Bon Koo

Ul-Ho Lee

Sang-Il Park

Kyung-Min Park

Jin-Suk Park

Jin-Soo Kim

Ki-Yong Lee

Tae-Gon Kim

Jin-Woung Jung

Chang-Gyu Lee

Sung-Ho Cho

Sung-In Ro

Sang-Gui Jo

Hye-Hyang Park

Hye-Dong Kim

Ki-Hyuk Kim

Soyoung Lim

Deuk-Jong Kim

Kwangjin Bae

Seong-Yeun Kang

Sang Il Park

Hee-Seok Lee

Dong-Yoon So

Seung-Hwan Kim

Yong-Chul Kim

Sang-kyun Im

Chul-Woo Kim

Kwang-Jin Bae

Kyoung-sei Choi

Se-Ho You

Kyung Hyun Choi

Dae-Young Choi

Mi-Yeon Kim

Han-Na Ma

Gyung-Soon Park

Sang-Chul Sul

Sae-Young Kim

Nam-kyun Beon

Ok-Byoung Kim

Sang-Hoon Ha

Young-Hoon Cho

Duckgyu Kim

Choong-bin Yim

Ki Hoon Kim

Min-Chang Kim

Jae-Min Shin

Sunghyuk Kim

Chang-ho Shon

Hye-Rin Choi

Ki-Ock Shin

A semiconductor package includes a first substrate including a first wiring layer inside the first substrate, a second substrate including a second wiring layer inside the second substrate, and a mold layer between the first substrate and the second substrate. An upper surface of the mold layer is on a same plane as upper surfaces of the first substrate and the second substrate. The package includes a first connecting film on each of the upper surface of the first substrate and the upper surface of the second substrate, the first connecting film connecting the first substrate and the second substrate, and a first semiconductor chip on the upper surface of the first substrate. The first semiconductor chip is spaced apart from the first connecting film, and an upper surface of the first connecting film is lower than an upper surface of the first semiconductor chip.

Semiconductor package

Disclosed is a semiconductor package including a base film that has a first surface and a second surface opposite to the first surface, a plurality of input/output lines on the first surface of the base film, a semiconductor chip disposed on the first surface of the base film and connected to the input/output lines and including a central portion and end portions on opposite sides of the central portion, and a heat radiation pattern on the second surface of the base film. The heat radiation pattern corresponds to the semiconductor chip and has a plurality of openings that correspond to the end portions of the semiconductor chip and that vertically overlap the end portions of the semiconductor chip.

Display substrates and display devices with reduced electrical resistance are disclosed. One inventive aspect includes a switching device, a first wiring and a second wiring. The switching device includes a first semiconductor layer, first and second gate insulation layers, a source electrode and a drain electrode. The source and drain electrodes are formed to electrically connect, through the first and second gate insulation layers, to the first semiconductor layer. The second wiring is formed on the second gate insulation layer and electrically connected to the first wiring.

Method for manufacturing a display substrate comprising interconnected first and second wirings

A display panel and display device having the same are disclosed. In one aspect, the display panel includes a first substrate including a display region configured to display images and a non-display region surrounding the display region. The display panel further includes a metal pattern disposed in the non-display region, a second substrate opposing the first substrate, and a sealant disposed between and substantially sealing the first and second substrates, wherein the sealant at least partially overlaps the metal pattern. The metal pattern includes a body portion surrounding the display region and a plurality of protrusions extending from the body portion in a direction from the display region to the non-display region.

Display panel and display device having the same

Display substrate comprising interconnected first and second wirings and display device including the same

In a method of operating an image sensor, a first pixel and a second pixel are commonly connected to a floating diffusion node. A voltage of the floating diffusion node is boosted. A first image signal of the first pixel is read through the floating diffusion node after of the voltage of the floating diffusion node is boosted. A second image signal of the second pixel is read through the floating diffusion node after the first image signal is read. The image sensor has a shared structure in which a plurality of pixels are connected to a single floating diffusion node. Blooming may be reduced in the image sensor by boosting the voltage of the floating diffusion node before reading the image signal to lower the potential barrier formed between the photodiode and the floating diffusion node and drain the saturated photocharges into the floating diffusion node.

Image sensor and a method of operating the same

An organic light emitting diode display includes: a substrate; a semiconductor layer formed on the substrate and including a switching semiconductor layer, a driving semiconductor layer, and a light emission control semiconductor layer spaced apart from each other; a first gate insulating layer covering the semiconductor layer; a light emission control gate electrode formed on the first gate insulating layer and overlapping the light emission control semiconductor layer; a second gate insulating layer covering the light emission control gate electrode; a switching gate electrode and a driving gate electrode formed on the second gate insulating layer and respectively overlapping the switching semiconductor layer and the driving semiconductor layer; and an interlayer insulating layer covering the switching gate electrode, the driving gate electrode, and the second gate insulating layer. A doping concentration of a channel region of the driving semiconductor layer is higher than a doping concentration of a channel region of the light emission control semiconductor layer.

Organic light emitting diode display and method of manufacturing the same

An organic light emitting display panel may include a plurality of thin film transistors on a substrate, an insulating interlayer on the thin film transistors, a plurality of first electrodes on a portion of the insulating interlayer electrically connected to the thin film transistors, a plurality of metal lines on a portion of the insulating interlayer, a pixel defining layer on a portion of the insulating interlayer and a portion of the first electrodes, a plurality of organic light emitting structures on the first electrodes in the pixel area, a second electrode on the organic light emitting structures, and a spacer on the pixel defining layer. The insulation interlayer may partially expose electrodes of the thin film transistors. The pixel defining layer may define a pixel area by partially exposing the first electrodes, and an exposed area of the insulating interlayer by partially exposing the insulating interlayer.

Organic light emitting display panel including a protective spacer and method of manufacturing the same

A display apparatus which can be uniformly sealed by an inhomogeneous laser beam is disclosed. One inventive aspect includes a display substrate, an encapsulation substrate and a sealing portion. On the display substrate, a display unit, including a display device, is formed. The encapsulation substrate is formed to face the display substrate. The sealing portion is formed to surround the display unit and bond the display substrate and the encapsulation substrate to each other.

Display apparatus

In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.

Thin film transistor and display device using the same

An organic image sensor includes a first organic photoelectric conversion pixel circuit on an active region of a substrate and a second organic photoelectric conversion pixel circuit on an optical black region of the substrate. The first organic photoelectric conversion pixel circuit includes a first organic photoelectric conversion element configured to generate charges responding to incident light and a first readout circuit configured to receive a first input signal including the charges generated in the first organic photoelectric conversion element. The second organic photoelectric conversion pixel circuit includes a second organic photoelectric conversion element and a second readout circuit configured to receive a second input signal generated irrespective of the incident light.

Organic image sensor with optical black regions

A thin film transistor, a manufacturing method thereof, and a display device having the same are disclosed. The thin film transistor includes a semiconductor layer formed on a substrate, a gate insulating layer formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating above the semiconductor layer, source and drain electrodes connected to the semiconductor layer, and 3.5 to 4.5 protrusions formed on the semiconductor layer overlapped with the gate electrode. Malfunction of the thin film transistor and inferior image quality of the display device can be prevented by adjusting the number of protrusions to minimize leakage current and defects.

Thin film transistor, method of manufacturing the same, and display device having thin film transistor

A stack type semiconductor package and a method of fabricating the stack type semiconductor package. The stack type semiconductor package includes: a lower semiconductor package including a circuit board, a semiconductor chip which is disposed on an upper surface of the circuit board, via-pads which are arrayed on the upper surface of the circuit board around the semiconductor chip, and an encapsulation layer which encapsulates the upper surface of the circuit board and has via-holes through which the via-pads are exposed; and an upper semiconductor package which is stacked on the encapsulation layer, is electrically connected to the lower semiconductor package, and comprises internal connection terminals which are formed on a lower surface of the upper semiconductor package.

Stack type semiconductor package and method of fabricating the same

A photo-mask is capable of preventing stain defects and a method for fabricating a liquid crystal display device using the photo-mask which achieves the same capability. The photo-mask includes a transparent substrate configured to transmit ultraviolet light and a light shielding layer configured to block ultraviolet light on a surface of the transparent substrate. The light shielding layer includes an absorption layer configured to absorb ultraviolet light.

Photo-mask and method for manufacturing liquid crystal display device using the same

Growing community of inventors

Suwon, South Korea

Ji-Yong Park