Samsung Electronics Co., Ltd.

Ji-Yong Ha

Jung-Gun You

Young-Joon Park

Jeong-Hyo Lee

Myung-Yoon Um

Jun-sun Hwang

Hwa-Sung Rhee

Hyun-Jo Kim

Jong-Mil Youn

Jae-yup Chung

Se-wan Park

Hee-Don Jeong

Seong-Yul Park

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

Semiconductor devices having gate structures with skirt regions

A semiconductor device and a method of manufacturing a semiconductor device, the device including an active fin protruding from a substrate and extending in a first direction, a first device isolation region disposed at a sidewall of the active fin and extending in a second direction, the second direction crossing the first direction, a normal gate electrode crossing the active fin, a first dummy gate electrode having an undercut portion on the first device isolation region, the first dummy gate electrode extending in the second direction, and a first filler filling the undercut portion on the first device isolation region, wherein the undercut portion is disposed at a lower portion of the first dummy gate electrode.

Fin semiconductor device including dummy gate on isolation layer

A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

Semiconductor device

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Seoul, South Korea

Ji-Yong Ha