Amkor Technology Singapore Holding Pte. Ltd.

Amkor Technology, Inc.

Ecovance Co. Ltd.

Sk Pucore Co., Ltd.

Ji Yeon Ryu

Tae Yong Lee

Jin Young Khim

Yi Seul Han

Won Chul Do

Byong Jin Kim

Jae Beom Shim

Ji Hun Yi

Sang Hyoun Lee

Hoon Tae Kim

Kyoung Yeon Lee

Kyung Youn Kim

Seong Dong Kim

Ron Huemoeller

Shaun Bowers

Doo Soub Shin

Joo Young Jung

Jae Beum Shim

Hyung Mo Kim

Woo Bin Jung

Seon A Lee

Jung Hwan Myung

Hyuk Hee Han

No Sun Park

Young Ju Lee

Myung Ok Kyun

Sang Hyeon Lee

Jun Su Byeon

Woo Jun Kim

Young Jae Cho

Tai Yong Lee

Jae Young Pai

Jeong Moo Kim

Kyeong Hwan You

Go Woon Jung

In one example, an electronic device includes a first substrate and a second substrate. The first substrate includes a substrate first side, a substrate second side, and a first conductive structure. An inner electronic component is coupled to the first conductive structure proximate to the substrate second side. An outer electronic component is coupled to the first conductive structure proximate to the substrate first side. The outer electronic component includes a body and a groove in the body configured to couple with an external interconnect. Inner interconnects couple the first substrate to the second substrate. The first substrate, the second substrate, the inner electronic component, and the outer electronic component are in a stacked configuration. The inner electronic component is interposed between the first substrate and the second substrate. Other examples and related methods are also disclosed herein.

Electronic devices having inner electronic component interposed between substrates and method of manufacturing the same

In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.

Semiconductor devices and methods of manufacturing semiconductor devices

A polythiol composition according to exemplary embodiments includes a first polythiol compound which provides a maximum peak in a high performance liquid chromatography (HPLC) analysis graph obtained at a wavelength of 230 nm, and a second polythiol compound having a molecular weight greater than that of the first polythiol compound and represented by CHS. A ratio of a peak area of the second polythiol compound to a peak area of the first polythiol compound, which are measured through the HPLC analysis graph at the wavelength of 230 nm, is 0.05 to 5.0%.

Polythiol composition, optical composition, and optical product

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising one or more conductive shielding members and an EMI shielding layer, and a method of manufacturing thereof.

Semiconductor device and method of manufacturing thereof

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

Semiconductor device and methods of manufacturing semiconductor devices

In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.

In one example, an electronic device includes a substrate with a substrate front side, a substrate rear side opposite to the substrate front side, a substrate body, and conductive vias extending through the substrate body from the substrate front side to the substrate rear side. A first construct is over the substrate front side and includes a first dielectric structure and first conductors embedded in the first dielectric structure and coupled to the conductive vias. A second construct is over the substrate rear side and includes a second dielectric structure and second conductors embedded in the second dielectric structure and coupled to the conductive vias. One or more of the first conductors or the second conductors define one or more passive devices. Other examples and related methods are also disclosed herein.

Electronic devices and methods of manufacturing electronic devices

The present invention relates to a biodegradable polyester resin, in which the first repeat unit comprising a first diol residue and an aromatic dicarboxylic acid residue and the second repeat unit comprising a second diol residue and an aliphatic dicarboxylic acid residue satisfy a ratio of the number of repeat units in a specific range, and the softness index of the resin satisfies a specific range, and to a process for preparing the same. Since the biodegradable polyester resin can provide a biodegradable polyester sheet or film that can be simultaneously enhanced in productivity, processability, and moldability and is excellent in tensile strength, tear strength, and friction coefficient and excellent in biodegradability and water degradability, it can be utilized in more diverse fields.

Biodegradable polyester resin, preparation method thereof, and biodegradable polyester film comprising the same

An eco-friendly biodegradable polyester resin composition includes: a polyester resin including a diol, an aromatic dicarboxylic acid and an aliphatic dicarboxylic acid; and 5000 ppm to 20000 ppm of a hydrophilic regulator having a molecular weight of 400 to 1300.

Biodegradable polyester resin composition and biodegradable polyester molded article including the same

A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.

In one example, a semiconductor device, comprises a first redistribution layer (RDL) substrate comprising a first dielectric structure and a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers, an electronic component over the first RDL substrate, wherein the electronic component is coupled with the first conductive structure, a body over a top side of the first RDL substrate, wherein the electronic component is in the body, a second RDL substrate comprising a second dielectric structure over the body, and a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers, and an internal interconnect coupled between the first conductive structure and the second conductive structure. Other examples and related methods are also disclosed herein.

Biodegradable polyester resin, preperation method thereof, and biodegradable polyester film comprising the same

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising multiple encapsulating layers and multiple signal distribution structures, and a method of manufacturing thereof.

Growing community of inventors

Incheon, South Korea

Ji Yeon Ryu