Samsung Electro-mechanics Co., Ltd.

Ji Yeon Oh

Dong Hwan Kim

Bum Seok Suh

In Hyuk Song

Jae Hoon Park

Dong Soo Seo

Won Jin Cho

Jae Kyu Sung

Min Hyuk Jung

A power semiconductor device may include a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region formed in an upper inner side of the second semiconductor region; a trench gate formed to penetrate through a portion of the first semiconductor region from the third semiconductor region; and a first conductivity type fourth semiconductor region formed below the second semiconductor region while being spaced apart from the trench gate.

Power semiconductor device having reduced gate-collector capacitance

There is provided a gate driving device, including: an inverter arm including a high-side switch and a low-side switch; a gate driving unit receiving an instruction signal to provide switching control to the inverter arm, outputting a control signal to control switching of the inverter arm, and including a plurality of gate drivers; and a balancing unit causing voltage applied to the plurality of gate drivers to be divided to be supplied to respective gate drivers among the plurality of gate drivers, according to the switching of the inverter arm based on the control signal.

Gate driving device including plurality of gate drivers supplied with equally divided voltage and inverter having the same

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Gyunggi-do, South Korea

Ji Yeon Oh