Samsung Electronics Co., Ltd.

Ji-yeon Ku

Young-jun Park

Seung-nam Cha

Jung-inn Sohn

Sang-Hyun Lee

Sung-woo Hwang

A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane

A method of performing a function by combining one or more blocks including sensing whether the one or more blocks are connected, determining indexes respectively corresponding to the connected one or more blocks, deciding, by using the indexes, a function to be performed based on the sensing, the function being one of a plurality of functions, each function associated with a respective set of function blocks, and generating a control signal for performing the decided function may be provided.

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Yongin-si, South Korea

Ji-yeon Ku