Korea Research Institute of Chemical Technology

Ji Woon Choi

Young Ki Lee

Bo Keun Park

Gun Hwan Kim

Jeong Hwan Han

Taek Mo Chung

There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.

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Gunpo-si, South Korea

Ji Woon Choi