Skhynix Inc.

Korea Advanced Institute of Science and Technology

Other

Samsung Electronics Co., Ltd.

Ji Wook Kwon

Seung Tak Ryu

Dong Hwan Jin

Shigenobu Maeda

Jae Young Lee

Ha-Young Kim

Sung Chul Park

Seong Ju Park

Kyung Chul Shin

Chul Hyun Park

Chul Hong Park

Jae Seok Yang

Yuichi Hirano

Kwan Young Chun

Sung Min Kang

Moo Woong Cheon

Yoshinao Harada

Su Hyeong Choi

Byung Ju Kang

Azmat Raheel

Pan Jae Park

Provided are a LIDAR apparatus based on a time of flight and a moving object which output an electrical signal by transmitting and receiving light, generate a control signal by analyzing the electrical signal, measure a pin point distance by calculating a time of flight of the light based on the control signal, and process point cloud data generated based on a measured distance to accurately construct information on a surrounding environment.

Lidar apparatus based on time of flight and moving object

A semiconductor device includes first to fourth cells sequentially disposed on a substrate, first to third diffusion break structures, a first fin structure configured to protrude from the substrate, the first fin structure comprising first to fourth fins separated from each other by the first to third diffusion break structures, a second fin structure configured to protrude from the substrate, to be spaced apart from the first fin structure, the second fin structure comprising fifth to eighth fins separated from each other by the first to third diffusion break structures, the first to fourth gate electrodes being disposed in the first to fourth cells, respectively, and the number of fins in one cell of the first to fourth cells is different from the number of fins in an other cell of the first to fourth cells.

Semiconductor device

A multi-level memory device may include a most significant bit (MSB) determination circuit configured to determine a plurality of MSBs by comparing a cell current flowing through a memory cell with a predetermined reference current, a current/voltage conversion circuit configured to convert a copied cell current obtained by copying the cell current into a cell voltage, a charging time determination circuit configured to determine a charging time during which the copied cell current is converted into the cell voltage and output a charging end signal, and a least significant bit (LSB) determination circuit configured to determine a plurality of LSBs according to the cell voltage and the charging end signal.

Multi-level memory apparatus and data sensing method thereof

A multi-level memory apparatus includes two or more current paths configured to pass currents having different levels, a memory cell selectively coupled to the two or more current paths, and a cell current copy unit configured to copy a cell current flowing through the memory cell.

Growing community of inventors

Daejeon, South Korea

Ji Wook Kwon