Samsung Electronics Co., Ltd.

Ji-Won Yun

Bo-un Yoon

Sang-Jine Park

Jin-wook Lee

Jae-Jik Baek

Kee-Sang Kwon

Ha-Young Jeon

Ki-Hyung Ko

Ji-Min Jeong

Yeon-Jin Gil

Won-Sang Choi

A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.

Semiconductor device and method for fabricating the same

Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

Semiconductor devices including an isolation layer on a fin and methods of forming semiconductor devices including an isolation layer on a fin

Growing community of inventors

Hwaseong-si, South Korea

Ji-Won Yun