Skhynix Inc.

Soulbrain Sigma-Aldrich, Ltd

Hewlett-Packard Development Company, L.p.

S-Printing Solution Co., Ltd.

Hp Printing Korea Co., Ltd.

Ji-Won Moon

Sung-wook Kang

Jin-Hong Kim

Woong-Yong Choi

Moon-Sig Joo

Young-chae Kim

Sung-Hoon Lee

Jeong-Yeop Lee

Sung Gi Kim

Joon-hee Kim

Sook-Joo Kim

Yun-kyu Sim

Jun-Soo Jang

Jung-Nam Kim

Dae-Hyun Kim

Seung-Gweon Lee

Hyung-seok Chang

Sang-Kyung Lee

Jae-Sun Jung

Young-Jin Son

Chang-Sung Hong

Jong-Won Han

Hyun-Joon Kim

Jin-Ho Shin

Sang-Hoon Lee

Jong-In Kim

Ho-Jin Jang

Seong-Ho Jeong

Byeong-No Jeong

A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.

Film-forming composition and method for fabricating film by using the same

A variable resistance memory device that includes a first electrode, a second electrode, a variable resistance layer interposed between the first electrode and a second electrode. A metal oxide electrode is interposed between the first electrode and the variable resistance layer, and the metal oxide electrode does not include a nitrogen constituent.

Variable resistance memory device and method for fabricating the same

A resistance variable memory device includes: a first electrode; a second electrode; a resistance variable layer interposed between the first electrode and the second electrode; and nano particles that are disposed in the resistance variable layer and have a lower dielectric constant than the resistance variable layer.

Resistance variable memory device including nano particles and method for fabricating the same

Growing community of inventors

Gyeonggi-do, South Korea

Ji-Won Moon