Skhynix Inc.

Egtm Co., Ltd.

Temc Co., Ltd.

Ji Won Moon

Geun Su Lee

Sang Youl Yi

Min Su Kim

Ha Na Kim

Woong Il Choi

Dong Hyun Lee

Jae Min Kim

Young Sun Lee

Eun Ae Jung

Sung Jae Lee

Myung Soo Lee

Hyun Sik Noh

Kyoung Min Ma

Dong Hak Jang

Weon Yang Yu

In Joon Chang

Sang Hoon Jeon

Jin Wook Jang

Dae Yong Kwon

Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

Method of forming a thin film using a surface protection material

A cylinder container for storing and transporting a fluid, which is configured such that the same can store and transport a fluid, and can discharge the stored fluid at a configured discharge pressure under a configured condition. More specifically, the cylinder can have a fluid pressure adjustment valve installed on the cylinder container for storing and transporting a fluid such that a stored fluid can be discharged at a configured discharge pressure under a configured condition, the fluid pressure adjustment valve being configured such that the fluid storage capability of the cylinder container for storing and transporting a fluid can be improved.

Cylinder comprising fluid pressure adjustment valve having improved storage capability

A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (low-k) and excellent gap filling properties, may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

Gap-fill polymer for filling fine pattern gaps and method for fabricating semiconductor device using the same

Growing community of inventors

Yongin-si, South Korea

Ji Won Moon