General Electric Company

Ji Ung Lee

Reed Roeder Corderman

George E Possin

Ching-Yeu Wei

Douglas Albagli

Anping Zhang

Renee Bushey Rohling

Joleyn Eileen Balch

Heather Diane Hudspeth

Lauraine Denault

William Andrew Hennessy

William Hullinger Huber

The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Gated nanorod field emitter structures and associated methods of fabrication

A method and associated structure for forming a free-standing electrostatically-doped carbon nanotube device is described. The method includes providing a carbon nanotube on a substrate in such a way as to have a free-standing portion. One way of forming a free-standing portion of the carbon nanotube is to remove a portion of the substrate. Another described way of forming a free-standing portion of the carbon nanotube is to dispose a pair of metal electrodes on a first substrate portion, removing portions of the first substrate portion adjacent to the metal electrodes, and conformally disposing a second substrate portion on the first substrate portion to form a trench.

Free-standing electrostatically-doped carbon nanotube device and method for making same

Free-standing electrostatically-doped carbon nanotube device

A self-aligned gated field emission device and an associated method of fabrication are described. The device includes a substrate and a porous layer disposed adjacent to the surface of the substrate, wherein the porous layer defines a plurality of substantially cylindrical channels, each of the plurality of substantially cylindrical channels aligned substantially parallel to one another and substantially perpendicular to the surface of the substrate. The device also includes a plurality of substantially rod-shaped structures disposed within at least a portion of the plurality of substantially cylindrical channels defined by the porous layer and adjacent to the surface of the substrate, wherein a portion of each of the plurality of substantially rod-shaped structures protrudes above the surface of the porous layer. The device further includes a gate dielectric layer disposed on the surface of the porous layer, wherein the gate dielectric layer is disposed between the plurality of substantially rod-shaped structures. The device still further includes a conductive layer selectively disposed on the surface of the gate dielectric layer, wherein the conductive layer is selectively disposed between the plurality of substantially rod-shaped structures.

Self-aligned gated rod field emission device and associated method of fabrication

The present invention provides a method and associated structure for forming an electrostatically-doped carbon nanotube device. The method includes providing a carbon nanotube having a first end and a second end. The method also includes disposing a first metal contact directly adjacent to the first end of the carbon nanotube, wherein the first metal contact is electrically coupled to the first end of the carbon nanotube, and disposing a second metal contact directly adjacent to the second end of the carbon nanotube, wherein the second metal contact is electrically coupled to the second end of the carbon nanotube. The method further includes disposing a first metal electrode adjacent to and at a distance from the first end of the carbon nanotube, wherein the first metal electrode is capacitively coupled to the first end of the carbon nanotube, and disposing a second metal electrode adjacent to and at a distance from the second end of the carbon nanotube, wherein the second metal electrode is capacitively coupled to the second end of the carbon nanotube. The method still further includes selectively applying a first bias to the first metal electrode to electrostatically dope the first end of the carbon nanotube and selectively applying a second bias to the second metal electrode to electrostatically dope the second end of the carbon nanotube.

Method for forming an electrostatically-doped carbon nanotube device

A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.

Imaging array and method for manufacturing same

A radiation detector includes a top-gate thin film transistor (TFT) including a source electrode, a drain electrode, and a gate electrode, and a diode electrically coupled to the source electrode.

Imaging array and methods for fabricating same

A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.

A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a TFT dielectric layer, a TFT semiconductive layer, and a TFT intrinsic amorphous silicon (a-Si) layer. The radiation detector also includes a capacitor including a first electrode, a second electrode substantially coplanar with the gate electrode, and a capacitor dielectric, the capacitor dielectric including a capacitor dielectric layer substantially coplanar with the TFT dielectric layer, a capacitor semiconductive layer substantially coplanar with the TFT semiconductive layer, and a capacitor a-Si layer substantially coplanar with the TFT a-Si layer.

Growing community of inventors

Niskayuna, NY, United States of America

Ji Ung Lee