Samsung Electronics Co., Ltd.

Ji-Suk Kwon

Uk-Rae Cho

Tae-Hyoung Kim

Young-Ho Kim

Young-Ju Kim

Soo-Young Kim

Hyang-Ja Yang

Hyuk-Joon Kwon

Bok-Yeon Won

Su-a Kim

Sang-Keun Han

Hyun-chul Yoon

Hwa-Jin Kim

Bum-Jae Lee

Woong-dai Kang

Min-Woo Won

Ji-Hak Yu

Seok-Jae Lee

A memory device including a memory cell array region, includes, column selection signal lines formed in a first column conduction layer of the memory cell array region and extending in a column direction, global input-output data lines formed in a second column conduction layer of the memory cell array region different from the first column conduction layer and extending in the column direction and power lines formed in a shield conduction layer of the memory cell array region between the first column conduction layer and the second column conduction layer. The noises in the signal lines and the power lines may be reduced and performance of the memory device may be enhanced by forming the column selection signal lines and the global input-output data lines in different column conduction layers and forming the power lines in the shield conduction layer between the column conduction layers.

Memory device and method of disposing conduction lines of the same

An impedance control circuit includes an impedance detector, an output driver and an impedance controller. The impedance detector generates a first output value to a detection pad connected between an external determination resistor and a pull-up transistor array, and outputs a second output value to a resistance divider terminal commonly connected between a pull-up and pull-down transistor array in response to a pull-up control code data and a pull-down control code data. The output driver has a commonly connected pull-up and pull-down transistor array, and a compensating unit connected to the pull-up and pull-down transistor array of the output driver, to compensate for quantization error of the pull-up and pull-down control code data. The impedance controller performs a comparison and counting operation so that the first and second output values of the impedance detector become approximated to a predetermined reference value, and generates the pull-up and pull-down control code data.

Impedance control circuit in semiconductor device and impedance control method

A drive circuit having impedance control includes an impedance matching array unit having a plurality of transistors, the plurality of transistors selectively driven in accordance with an array drive control signal generated by control code data, and an update prohibition control unit for generating a transfer control signal to prohibit driving the transistors during a first time interval occurring when internal data transition, and applying the transfer control signal to the impedance matching array unit.

Impedance controllable ouput drive circuit in semiconductor device and impedance control method therefor

A circuit wiring layout in a semiconductor memory device comprises first and second p-type MOS transistors having channels connected to each other in series, and first and second n-type MOS transistors having sources connected in parallel to a drain of the second p-type MOS transistor, the p- and n-type MOS transistors forming a decoder NOR gating portion. The first and second n-type MOS transistors having drains connected to first and second main lines, respectively, and sources connected to a section line. The first and second p-type MOS transistors having gates to which select signals for first and second accesses are applied, respectively. The first and second p-type MOS transistors share an active junction with each other in a first area. The first and second n-type MOS transistors are spaced from the first area in a direction of the section line and have independent active junctions.

Circuit wiring layout in semiconductor memory device

Growing community of inventors

Seoul, South Korea

Ji-Suk Kwon