Samsung Electronics Co., Ltd.

Qualcomm Incorporated

Yonsei University

Dong-A St Co., Ltd.

Ji-Su Kim

Dae-seok Byeon

Sung-Hoan Kim

Seung Hyuk Kang

Jung Pill Kim

Seung-Hwan Lee

Seong-Ook Jung

Jin-wook Lee

Myung-jin Lee

Ihor Vasyltsov

Yun-Jung Lee

Taehui Na

Hee-Won Lee

Doo-yeon Lee

Duk-Jin Oh

Xun Chen

Min-Jung Lee

Joung-won Park

Jae-Yong Park

Dong-Gi Lee

Joon-Suc Jang

Woo Young Kwak

Sun-Ho Choi

Suk-Eun Kang

Jun-Yeon Lee

Jang-su Lee

Seung-Jin Kim

Chang-Yong Shin

Jin-bae Bang

Moon-sung Kang

Hyeon-jung Cha

Chan-Ha Kim

Seung-Kyung Ro

Punna Reddy Ullapu

Young-Ha Choi

Seong-Hun Moon

Hyung-Deuk Kim

The present invention relates to a novel salt of (R)-(1-methylpyrrolidine-3-yl)methyl(3'-chloro-4&#x2032;-fluoro-[1,1&#x2032;-biphenyl]-2-yl)carbamate and a crystal form thereof. Also, the novel salt of (R)-(1-methylpyrrolidine-3-yl)methyl(3&#x2032;-chloro-4&#x2032;-fluoro-[1,1&#x2032;-biphenyl]-2-yl)carbamate and the crystal form thereof according to examples of the present invention have remarkably excellent stability, hygroscopicity and solubility.

Salt of (R)-(-methylpyrrolidine--yl)methyl(-chloro--fluoro-[-biphenyl]--yl)carbamate and crystal form thereof

A non-volatile memory device includes a memory cell array including a plurality of memory cells; a page buffer for performing a plurality of read operations and storing results of the read operations, wherein each of the read operations includes at least one sensing operation for selected memory cells from the plurality of memory cells; a multi-sensing manager for determining a number of sensing operations for each of the plurality of read operations and controlling the page buffer to perform the read operations; and a data identifier for identifying a data state of a bit for the selected memory cells based on the results of the read operations, wherein the multi-sensing manager determines the number of sensing operations for at least one read operation from among the read operations to be different from the number of sensing operations for other read operations from among the read operations.

Non-volatile memory device and a method of operating the same

A method of operating a memory device to read data may include determining, in a first read interval associated with a first read operation, a threshold voltage distribution of a most significant program state of a target logical memory page included in a first physical memory page among a plurality of physical memory pages, the first read operation being an operation of reading the target logical memory page of the first physical memory page; transmitting, to a memory controller, a distribution determination result, the distribution determination result being related to the threshold voltage distribution; receiving, from the memory controller, offset levels corrected based on the distribution determination result; and adjusting a read voltage based on offset levels prior to performing a second read operation on a second physical memory page among the plurality of physical memory pages.

Method of reading data about memory device, method of controlling memory controller, and storage device including memory device and memory controller

An operating method of a storage device includes a controller: receiving read data from a non-volatile memory; measuring a plurality of threshold voltage distributions respectively corresponding to a plurality of memory units of the non-volatile memory, based on the received read data; measuring a distribution variation between the plurality of memory units, based on the measured plurality of threshold voltage distributions; dynamically determining operation parameters for the non-volatile memory, based on the measured distribution variation; and transmitting, to the non-volatile memory, an operate command, an address, and at least one operation parameter corresponding to the address.

Storage device having parameter calibration function, and operating method thereof

A method and system for monitoring a biomedical signal employ a sensor module configured to output a continuous electrical signal by sensing the biomedical signal, a memory configured to store reference data, a transmitter configured to transmit output data via a wireless channel, and a data processing unit configured to determine whether to transmit input data via the transmitter as the output data, based on the input data, which is generated from the continuous electrical signal, and the reference data.

Method and system for monitoring continuous biomedical signal

A resistive memory sensing method includes sensing outputs of an offset-cancelling dual stage sensing circuit (OCDS-SC) by an NMOS offset-cancelling current latched sense amplifier circuit (NOC-CLSA). The NOC-CLSA is configured with a reduced input capacitance and a reduced offset voltage. Input transistors of the NOC-CLSA are coupled between latch circuitry and ground. A first phase output of the OCDS-SC is stored by the NOC-CLSA during a pre-charge step of the NOC-CLSA operation. A second phase output of the OCDS-SC is stored by the NOC-CLSA during an offset-cancelling step of the NOC-CLSA operation. By pipelining the OCDS-SC and NOC-CLSA, a sensing delay penalty of the OCDS-SC is overcome.

NMOS-offset canceling current-latched sense amplifier

A composition for filling an ion exchange membrane including a first aromatic vinyl monomer having a halogenated alkyl group or a quaternary ammonium salt group, a method of preparing the ion exchange membrane, an ion exchange membrane prepared using the method, and a redox flow battery including the ion exchange membrane.

Ion exchange membrane filling composition, method of preparing ion exchange membrane, ion exchange membrane, and redox flow battery

An electric field effect transistor of high breakdown voltage and a method of manufacturing the same are disclosed. A recessed portion is formed at the channel region and is filled by a protective oxide layer. Lightly doped source/drain regions are formed under the protective oxide layer. The protective oxide layer protects the lightly doped source/drain regions. Accordingly, the protective oxide layer prevents the electric field from being concentrated to a bottom corner portion of the gate structure. In addition, the effective channel length is elongated since an electric power source is connected to heavily doped source/drain regions from an outside source of the transistor, instead of being connected to lightly doped source/drain regions.

Field effect transistor with a high breakdown voltage and method of manufacturing the same

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Seoul, South Korea

Ji-Su Kim