Snu Rdb Foundation

Hanwha Chemical Corporation

Hyundai Electronics Industries Co. Ltd.

Ji Soon Ihm

Dong Ok Kim

Shin Hoo Kang

Jin-Hong Kim

Moon-Su Seo

This disclosure relates to porous carbon and a method of preparing the same. The porous carbon of the present invention is derived from a carbide compound having a composition comprising metal and oxide. The porous carbon of the present invention comprises both micropores and mesopores, and has large specific surface area, and thus, may be usefully used in various fields.

Porous carbon and method of preparing the same

This disclosure relates to porous boron nitride and a method for preparing the same. The porous boron nitride of the present invention may be obtained by mixing a boron source with a nitrogen source, heating the mixture to form a compound, and then, extracting elements other than boron and nitrogen. The porous boron nitride of the present invention comprises both micropores and mesopoers, and it has a large specific surface area, and thus, may be usefully used in various fields.

Porous boron nitride and method of preparing the same

This disclosure relates to porous carbon and a method of preparing the same. The porous carbon of the present invention is derived from a carbonitride compound having a composition comprising metal and nitrogen. The porous carbon of the present invention comprises both micropores and mesopores, and has a large specific surface area, and thus, may be usefully used in various fields.

Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n,m, n&minus;m&ne;3 l) nanotubes, whereby substantially reducing a device size and improving an operation speed as the carbon nanotube has a thermal conductivity much better than silicon.

Carbon nanotubes transistor

Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n,m, n&minus;m&ne;3l) nanotubes, whereby substantially reducing a device size and improving an operation speed as the carbon nanotube has a thermal conductivity much better than silicon.

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Seoul, South Korea

Ji Soon Ihm