Shangrao Jinko Solar Technology Development Co., Ltd

Lg Electronics Inc.

Trina Solar Co., Ltd.

Ji Soo Ko

Sung Jin Kim

Ju Hwa Cheong

Hae Jong Cho

Won Jae Chang

Jun Yong Ahn

Young Gu Do

Jae Won Chang

Hyun Jung Park

In Do Chung

Discussed is a solar cell including a single crystalline silicon substrate, a polycrystalline silicon layer on a back surface and side surfaces of the single crystalline silicon substrate, a diffusion region on a front surface of the single crystalline silicon substrate, a front passivation layer on the diffusion region, a back passivation layer on the polycrystalline silicon layer, a first electrode connected to the diffusion region through the front passivation layer, and a second electrode connected to the polycrystalline silicon layer through the back passivation layer, wherein the side surfaces of the single crystalline silicon substrate includes a first portion without the polycrystalline silicon layer and a second portion with the polycrystalline silicon layer.

Method of manufacturing solar cell

Discussed is a solar cell including a semiconductor substrate, a conductive region disposed in the semiconductor substrate or over the semiconductor substrate, and an electrode electrically connected to the conductive region. The electrode includes a first electrode part and a second electrode part disposed over the first electrode part. The second electrode part includes a particle connection layer formed by connecting a plurality of particles including a first metal and a cover layer including a second metal different from the first metal and covering at least the outside surface of the particle connection layer.

Solar cell and method for manufacturing the same, and solar cell panel

Provided are a method of manufacturing a solar cell, including a polycrystalline silicon layer forming operation of forming a polycrystalline silicon layer containing a first dopant on a back surface of a semiconductor substrate formed of a single crystal silicon material including a base region, a front texturing operation of texturing a front surface of the semiconductor substrate and simultaneously removing the polycrystalline silicon layer formed on the front surface of the semiconductor substrate, a second conductive region forming operation of forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate, a passivation layer forming operation of forming a first passivation layer on the polycrystalline silicon layer formed on the back surface of the semiconductor substrate and forming a second passivation layer on the second conductive region of the front surface of the semiconductor substrate, and an electrode forming operation of forming a first electrode connected to the polycrystalline silicon layer through the first passivation layer and forming a second electrode layer at the second conductive region through the second passivation layer.

Growing community of inventors

Seoul, South Korea

Ji Soo Ko