Samsung Electronics Co., Ltd.

Ji-soo Kim

Chang-woong Chu

Kyeong-Koo Chi

Seung-Pil Chung

Wan-jae Park

Sang-Hun Seo

Jin-hwan Park

Kyung-ho Kim

Bo-Gyeong Kang

Kyoung-sub Shin

Myung-jin Jung

Bong-jun Choi

Chae-won Yu

Chan-sol Kim

Pil-sung Kang

So-jeong Lee

Woo-seok Hwang

Dong-Hyun Kim

Tae-hyuk Ahn

Yong-chul Oh

In-ji Kim

Hyoung-Joon Kim

Dong-Seok Nam

Kyung-won Park

Byeong-yun Nam

Young-eun Kim

Ji-yeon Park

Sang-Hyeop Lee

Yun-Sook Chae

Won-seok Lee

Bong-chan Cho

An operating method of a host includes receiving a request for secure deletion of a first file stored in a storage system, providing an invalidation command to the storage system for invalidating data of the first file, providing an erase command to the storage system for erasing invalidated data included in the storage system, and performing a deletion operation, which is executable on an operating system of the host, on the first file which is deleted by the erase command.

Host and storage system for securely deleting files and operating method of the host

A method of operating an electronic device includes: determining whether an external electronic device is connected to an access point to which the electronic device is connected; transmitting state information of the electronic device to the external electronic device connected to the access point; receiving an input corresponding to the transmitted state information of the electronic device, from the external electronic device; displaying a result corresponding to the received input on a display; and transmitting the result displayed on the display to the external electronic device.

Electronic device and operation method thereof

A method for authenticating a memory device by a controller device. The method including sending, to the memory device by the controller device, a pre-stored number, a random number and information related to a key which is stored in the memory device; receiving, by the controller device, authentication information from the memory device; verifying, by the controller device, the authentication information using verification data; and if verification succeeds, generating, by the controller device, an Enhanced Media IDentifier (EMID) using a pre-stored value and unique information related to the memory device.

Method and storage device for protecting content

A method for protecting content of a storage device including a memory for storing data and a controller for managing data input and output of the memory is provided, in which a Data Encryption Key (DEK) for encrypting the data stored in the memory is generated, an IDentifier (ID) of the memory is acquired, the DEK is encrypted using user secret information and the ID of the memory, and the encrypted DEK is stored in the memory.

A wafer stage including an electrostatic chuck and a method for dechucking a wafer using the wafer stage are provided, wherein, the wafer stage includes an electrostatic chuck support, an electrostatic chuck, a lifting means, and a grounding means including a device for connecting the interconnections for grounding the lifting means. According to the method for dechucking a wafer, when a lifting means is in contact with a rear side of the wafer, the lifting means is grounded. Then, an electrostatic chuck is neutralized by supplying power to electrostatic electrodes, and the wafer is neutralized by supplying plasma to the wafer.

Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage

In a method for determining the degree of charge-up induced by plasma used for manufacturing a semiconductor device and an apparatus therefor, a predetermined region on a surface of a wafer on which a plasma process has been performed is repeatedly scanned with a primary electron beam. Secondary electrons generated by a reaction between the primary electron beam and the surface of the wafer that are emitted to the outside of the surface of the wafer are collected. The degree of charge-up induced at the surface of the wafer by the plasma used during the plasma process is determined from the change in the amount of collected secondary electrons. Determination as to whether a contact hole is opened or as to the degree of degradation of a gate insulating layer is made based on the degree of charge-up.

Method of determining whether a conductive layer of a semiconductor device is exposed through a contact hold

A semiconductor device having self-aligned contact pads and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate and an isolation layer formed on the semiconductor substrate. The semiconductor substrate defines a plurality of active regions that each have a major axis and a minor axis. A plurality of gates are formed to cross the plurality of active regions and extend in the direction of the minor axis. First and second source/drain regions are formed in active regions at either side of each of the gates. First and second self-aligned contact pads (SACs) are formed to contact the top surfaces of the first and second source/drain regions, respectively.

Semiconductor device having self-aligned contact pads and method for manufacturing the same

A method of manufacturing a contact of a semiconductor device includes a series of pretreatment processes each performed in a plasma pretreatment module. A semiconductor substrate has an interlayer formed on an underlayer of a material containing silicon. A contact hole is formed in the interlayer to expose a surface of the underlayer. Subsequently, the semiconductor substrate is loaded into a plasma pretreatment module. The photoresist pattern is removed by ashing in the plasma pretreatment module. A damaged layer at the surface exposed by the contact hole is then removed in the plasma pretreatment module. Subsequently, the semiconductor substrate is pre-cleaned in the plasma pretreatment module. The semiconductor substrate is then transferred, while in a vacuum, to a deposition module. There, an upper layer is formed on the substrate to fill the contact hole.

Method of manufacturing a contact of a semiconductor device using cluster apparatus having at least one plasma pretreatment module

A method and apparatus for use in manufacturing a semiconductor device strips a polysilicon hard mask without damaging the layer left exposed by openings formed by using the polysilicon hard mask as an etching mask. The method includes forming a polysilicon hard mask in a pattern on a first layer to expose a portion of the first layer, dry etching the exposed portion of the first layer using the polysilicon hard mask as an etching mask to form an opening in the first layer, and thereafter removing the polysilicon hard mask by supplying an etching gas onto the polysilicon hard mask in a direction parallel to the major surface of the semiconductor substrate. The processing apparatus includes a reaction chamber including a spin chuck which supports the semiconductor substrate for rotation, a gas supply unit for supplying a process gas to the reaction chamber, a gas injection unit for injecting the process gas supplied by the gas supply unit into the reaction chamber in a direction parallel to the major surface of the semiconductor substrate, and an exhaust unit for exhausting gases from the reaction chamber.

Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard mask

Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor

Methods are provided for conductively contacting an integrated circuit, including a plurality of spaced apart lines thereon, using a dummy dielectric layer. A dummy dielectric layer is formed between first selected ones of the spaced apart lines. An interdielectric layer is formed between second selected ones of the spaced apart lines that are different from the first selected ones of the lines. The interdielectric layer has a lower etch rate than the dummy dielectric layer with respect to a predetermined etchant. The dummy dielectric layer is etched with the predetermined etchant, to remove at least some of the dummy dielectric layer between the first selected ones of the spaced apart lines. A conductive layer is formed between the first selected ones of the spaced apart lines from which at least some of the dummy dielectric layer has been removed, to electrically contact the integrated circuit between the first selected ones of the spaced apart lines.

Methods for forming conductive contact body for integrated circuits using dummy dielectric layer

Growing community of inventors

Sungnam, South Korea

Ji-soo Kim