Samsung Electronics Co., Ltd.

Ji Soo Im

Yong Woo Lee

Seung Bo Shim

Young Jin Noh

Doug Yong Sung

Cheon Lee

Peter Byung H Han

Masato Horiguchi

Hyeong Mo Kang

Won Young Choi

Kyung Sun Kim

Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Plasma processing equipment

A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the wafer; an insulation ring disposed to surround an outer circumferential surface of the focus ring; and an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck; wherein the edge ring includes a flow channel containing a fluid therein.

Plasma processing apparatus

Growing community of inventors

Seongnam-si, South Korea

Ji Soo Im