Samsung Electronics Co., Ltd.

Ji Min Choi

Ji Young Kim

Chang Hyun Cho

Dong Ryul Lee

Ho Ouk Lee

Dong Jun Lee

Chan Sic Yoon

Joong Chan Shin

A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench.

Semiconductor device having a trench type device isolation film and method for fabricating the same

A method for fabricating a semiconductor device includes providing a substrate including a cell region including a bit line structure, a bit line spacer and a lower electrode and a peripheral circuit region including first to third impurity regions, forming an interlayer insulating film on the peripheral circuit region, forming a first metal layer on the interlayer insulating film, forming a first trench and a second trench in the first metal layer between the first and second impurity regions, the second trench is disposed between the second and third impurity regions and exposes the interlayer insulating film, forming a first capping pattern on the first trench to form an air gap in the first trench, filling the second trench with a first insulating material, and forming, on the first metal layer, a contact connected to the third impurity region.

Semiconductor device having air gap spacers and method for fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Ji Min Choi