Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Ji Hyung Moon

Sang Youl Lee

June O Song

Hwan Hee Jeong

Kwang Ki Choi

Chung Song Kim

Sun Woo Park

Hyeon Min Cho

Young Kyu Jeong

Yong Tae Moon

Sung Kyoon Kim

Jung Hyeok Bae

Tae-Yeon Seong

Se Yeon Jung

Tae Yong Lee

Youn Joon Sung

Woo Sik Lim

Dae Sung Kang

Su Ik Park

Min Gyu Na

Myeong Soo Kim

Ki Man Kang

Tae Yeon Seong

Byung Hak Jeong

So Jung Kim

Sang Rock Park

Bum Doo Park

Jun O Song

Myung Ho Han

Juno Song

Yoon Min Jo

Disclosed in an embodiment are a semiconductor device and a light-emitting device package including same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged in a matrix shape in the central area of the substrate; passivation layers arranged on upper surfaces and lateral surfaces of the semiconductor structures and on the edge area of the substrate; a plurality of first wiring lines which are arranged at lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include first end parts extending from the central area to the edge area of the substrate; a plurality of second wiring lines which are arranged at the lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include second end parts extending from the central area to the edge area of the substrate; a plurality of first pads penetrating the passivation layer so as to be connected to the plurality of first end parts; and a plurality of second pads penetrating the passivation layers so as to be connected to the plurality of second end parts, wherein the plurality of semiconductor structures include a plurality of first semiconductor structures, which are arranged in a first area of the central area, and a plurality of second semiconductor structures, which are arranged in a second area of the central area, and the size of the plurality of first semiconductor structures differs from the size of the plurality of second semiconductor structures.

Semiconductor device and light emitting element package including same

In an embodiment, disclosed is a semiconductor device comprising: a semiconductor structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer; and a second electrode which is electrically connected to the second conductive semiconductor layer, wherein an area ratio between an area of an upper surface of the second conductive semiconductor layer and an area of an outer surface of the active layer is 1:0.0005 to 1:0.01.

Semiconductor device

Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.

Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light in a green wavelength band, and a height of the second active layer differs from a height of the first active layer.

Semiconductor device and display device including the same

Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.

Semiconductor module and display device including same

A light-emitting element according to an embodiment comprises: a substrate; a light-emitting structure comprising a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, which are successively arranged on the substrate; and first and second electrodes, which are electrically connected to the first and second conductive semiconductor layers, respectively, wherein the first electrode comprises at least one first contact portion arranged on the first conductive semiconductor layer, which is exposed to at least a part of a first area of the light-emitting structure, and connected to the first conductive semiconductor layer, and a plurality of second contact portions connected to the first conductive semiconductor layer that is exposed in a second area, which is positioned, on a plane, closer to the inner side than the first area of the light-emitting structure, and the second electrode comprises a third contact part, which is arranged in the second area of the light-emitting structure, and which is connected to the second conductive semiconductor layer.

Light-emitting element, light-emitting element package comprising light-emitting element, and light-emitting device comprising light-emitting element package

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Light emitting device and light emitting device package

One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.

Semiconductor device and display device comprising same

An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S

Display device manufacturing method

A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

The light-emitting device according to one embodiment includes a substrate; a plurality of light-emitting cells disposed on the substrate so as to be spaced apart from each other; and a connection line configured to electrically interconnect neighboring light-emitting cells, wherein each of the light-emitting cells includes: a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer disposed on the substrate; and first and second electrodes configured to be electrically connected to the first and second semiconductor layers respectively, wherein the light-emitting cells include: a first power cell configured to receive first power via the first electrode; and a second power cell configured to receive second power via the second electrode, and wherein the first electrode in the first power cell has a first planar shape different from a second planar shape of the second electrode in the second power cell.

Light-emitting device

A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.

Thin film transistor substrate, and display panel and display device including same

The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

Semiconductor device, display panel, and method for manufacturing display panel

A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

Growing community of inventors

Seoul, South Korea

Ji Hyung Moon