Samsung Electronics Co., Ltd.

Sungkyunkwan University

Samsung Display Co., Ltd.

Ji-hyun Bae

Sang-hun Jeon

Jong-Jin Park

Jong Jin Park

Hwi Dae Kim

Hee-Seop Kim

Seung-Hoon Lee

Kyung-Eun Byun

Sang-Won Kim

Kyung-Ho Jung

Thanh Tien Nguyen

Jung-kyun Im

Nae-eung Lee

Do-il Kim

Burak Guzelturk

Dae Joon Kang

Chwee Iin Choong

Quang Trung Tran

A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

Pressure sensor and pressure sensing method

The electrode structure includes: a textile-type conductive substrate; a first layer which is disposed on the textile-type conductive substrate and includes a plurality of one-dimensional nanostructures; and a second layer which is formed on the first layer and includes a graphene material.

Electrode structure, method of manufacturing the same, and energy storage device having the same

Provided is a memory device formed on a fiber. The memory device includes a lower electrode, a memory resistance layer, and an upper electrode, which are sequentially formed on a surface of the fiber. The memory resistance layer may have variable resistance properties. The memory device may further include an intermediate electrode and a switching layer formed between the memory resistance layer and the upper electrode.

Resistive random access memory devices formed on fiber and methods of manufacturing the same

Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant.

Thin film transistor on fiber and manufacturing method of the same

A textile-based stretchable energy generator is provided. The energy generator includes: flexible and stretchable first and second electrode substrates; and an energy generation layer, which is provided between the first and second electrode substrates and includes a dielectric elastomer for generating electrical energy from a transformation thereof.

Textile-based stretchable energy generator

A method for displaying a stereoscopic image of a display apparatus, the display apparatus can divide a received frame image corresponding to the preset column areas to generate M sub-frame images. In this example, the display apparatus may include a plurality of lenticular lenses disposed over a display panel to divide the display panel into a plurality of column areas. Each of the lenticular lenses may include a lenticular plate converting a flat image displayed on each of the column area into K stereoscopic images having directions different from each other. The M sub-frame images may be displayed on the display panel in a time division method. M shutters disposed over the M lenticular lenses according to the sub-frame image displayed on the display panel may selectively be opened and closed. Herein, K and M are natural numbers.

Method for displaying stereo-scopic image and display apparatus for performing the same

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Seoul, South Korea

Ji-hyun Bae