Samsung Display Co., Ltd.

Other

Skhynix Inc.

Seegene, Inc.

Ji Hye Han

Chul Min Bae

Jung Yun Jo

Chang Ok Kim

Eun Jin Kwak

Shin Il Choi

Yung Bin Chung

Yeoung Keol Woo

Chui Min Bae

Yong Kim

Geun Su Lee

Kwon Hong

Tae Wook Kang

Jong Min Lee

Young Wook Kim

Young In Hwang

Hyung Soon Park

Junghwan Yi

Jin Suk Lee

Sung Moon Ko

Young Yong Park

Hyung Hwan Kim

The method of the present invention enables efficient detection of a plurality of target nucleic acid sequences in one detection channel, by obtaining a data set of cycle/signal-change value.

Method and apparatus for detecting a plurality of target nucleic acid sequences in sample

A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

Display device

A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

Display device and method of manufacturing display device

A display device includes a substrate including pixels; a buffer layer disposed on the substrate; an etch stopper layer disposed between the substrate and the buffer layer; and at least one penetrating-hole penetrating the substrate, the buffer layer, and the etch stopper layer, wherein the etch stopper layer includes amorphous carbon.

Display device and manufacturing method thereof

A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

Display device and method of manufacturing the display device

A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

Display device of reducing the occurrence of optical afterimages and method of manufacturing the same

Display device including an amorphous carbon layer and manufacturing method thereof

Display device and method of fabricating the same

A light unit including: a light source; and an optical member that transmits and converts light emitted from the light source, wherein the optical member includes: a light guide; a low refractive index layer that is disposed on the light guide and has a lower refractive index than that of the light guide; a first capping layer that is disposed on the low refractive index layer; and a wavelength conversion layer that is disposed on the first capping layer and includes quantum dots, and the light guide includes a transparent metal oxide.

Light unit, manufacturing method thereof and display device comprising the same

A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 &#x212b; to about 6000 &#x212b;.

A backlight unit may include a light source, a light guide plate neighboring the light source, a low refractive index layer disposed on the light guide plate, a blocking layer disposed on the low refractive index layer, and a wavelength conversion layer disposed on the blocking layer and including quantum dots. A refractive index of the low refractive index layer may be less than a refractive index of the light guide plate.

Backlight unit and related display device

A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.

Growing community of inventors

Seoul, South Korea

Ji Hye Han