Seoul Viosys Co., Ltd.

Sensorview Incorporated

Sensorview Co., Ltd.

Ji Hun Kang

Yong Hyun Baek

Ji Hoon Park

Chae Hon Kim

So Ra Lee

Byoung Nam Kim

Kyoung Il Kang

Sang Woo Han

Dae Hong Min

Chung Hoon Lee

Dae Sung Cho

Seok Hyun Kang

Hyo Shik Choi

Il Chul Kim

Chang Yub Oh

Jae Hun Yu

Sung Cheol Cho

Joung Min Park

Sung Gyu Park

Min Jong Kim

Dong Il Yim

Yu Shin Kim

Hwa Yeon Lim

Jung Hwa Choi

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205≤X≤0.495 and 0.265≤Y≤0.450 in CIE color coordinates (X, Y).

Single chip multi band light emitting diode, light emitting device and light emitting module having the same

A multi-band light emitting diode is provided. The multi-band light emitting diode includes a first conductivity type semiconductor layer, a V-pit generation layer disposed on the first conductivity type semiconductor layer and having a first V-pit of a first inlet width, a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the V-pit on the first V-pit, an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit, and a second conductivity type semiconductor layer disposed on the active layer.

Light emitting diode

A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Single chip multi band LED and application thereof

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

Single chip multi band LED

A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

Single chip multi band led and application thereof

A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.

Method of fabricating a light emitting device having a stacked structure

A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

A connector assembly includes a first signal pin formed to be in contact with a signal line of a circuit board; a first insulator surrounding the first signal pin; and a first housing accommodating the first signal pin and the first insulator and having a hole at a rear thereof corresponding to the first signal pin, wherein the first housing includes at least one clamping arm disposed on at least one side of the hole, protruding to a rear of the first housing, and having a lower surface formed to be in contact with an upper surface of the circuit board and the connector assembly further includes a ground plate disposed below the clamping arm and having an upper surface formed to be in contact with a lower surface of the circuit board; a clamping plate movably disposed below the ground plate; and a fastening member.

Connector assembly coupled to a side of circuit board

A compact connector for transmitting super-high-frequency signals is adapted to connect a printed circuit board (PCB) to a single or multiple high-frequency signal lines transmitting super-high frequency signals therethrough. The compact connector includes: a male connector connected to the single or multiple super-high frequency signal lines and including a male connector housing receiving, securing, and protecting terminals of the single or multiple super-high frequency signal lines; and a connector socket mounted on the PCB and receiving the male connector housing fastened to the male connector, wherein the super high-frequency signal line terminals in the male connector are brought into direct contact with and connected to signal line terminal pads formed on the printed circuit board, respectively.

Compact connector for transmitting super high frequency signal

Disclosed is a coaxial cable male connector for transmitting super-high frequency signals, which is used in a coaxial cable connector for transmitting super-high frequency signals and is received in a connector socket mounted on a printed circuit board (PCB) to connect multiple coaxial cables to the PCB. The coaxial cable male connector includes: a single or multiple coaxial cables each including an inner conductor, an outer conductor, a dielectric, and a sheath, wherein the outer conductor, the dielectric, and the sheath are partially stripped to expose the inner conductor over a predetermined length, and a terminal of the exposed inner conductor is brought into electrical connect with a signal line terminal pad formed on the PCB; and a shielding can receiving the exposed inner conductors of the single or multiple coaxial cables, securing and protecting ends of the exposed inner conductors, and blocking electromagnetic waves generated from the inner conductors.

Growing community of inventors

Gyeonggi-do, South Korea

Ji Hun Kang