Skhynix Inc.

Ji Hui Baek

Sung Wook Jung

Dong Hun Lee

Hye Eun Heo

Tae Hwa Lee

Jin Ho Kim

Go-Hyun Lee

Jang Hee Jung

Kyung Bo Kim

A nonvolatile memory device may include a plurality of memory blocks each including a drain select line, word lines and a source select line, and a pass transistor stage including a plurality of pass transistors formed in series in an active region and suitable for transferring word line voltages to a memory block selected among the memory blocks, in response to a block select signal, wherein the pass transistors each share a drain with a first adjacent pass transistor at one side while sharing a source with a second adjacent pass transistor at the other, and wherein a pair of pass transistors which share the source transfer word line driving signal form drains thereof to a pair of word lines which are included in different memory blocks among the memory blocks, through the source.

Nonvolatile memory device

The present disclosure provides a semiconductor device with a structural stability. The semiconductor device includes a stack of vertical alterations of conductive layers and insulating layers; supports passing through the stack, each of the supports having a cross-section of an equilateral polygon, the supports being equidistantly arranged in a first direction and a second direction, the first and second directions crossing each other; and contact plugs electrically coupled respectively to the conductive layers, each of the contact plugs being disposed between at least two adjacent supports of the supports.

Semiconductor device with structural stability

A semiconductor device according to an embodiment may include cell strings including a plurality of memory cells coupled between bit lines and a source line and coupled to word lines, a peripheral circuit suitable for programming selected memory cells coupled to a selected word line among the word lines by applying a program voltage to the selected word line, and applying one or more pass voltages to unselected word lines, and a control circuit suitable for controlling the peripheral circuit to temporarily float the unselected word lines while the selected memory cells are programmed.

Semiconductor device and operating method thereof

A method of manufacturing a semiconductor memory device includes forming a first attached layer on a substrate, forming a stack layer on the first attached layer, separating the stack layer and the first attached layer from each other, forming vertical holes by performing a first etch process on the stack layer in a direction from bottom to top, removing the first attached layer, attaching the stack layer in which the vertical holes are formed to the substrate, and performing a second etch process so that each of the vertical holes has a uniform width.

Growing community of inventors

Gyeonggi-do, South Korea

Ji Hui Baek