Samsung Electronics Co., Ltd.

Samsung Sds Co., Ltd.

Ji-Hoon Kang

Dae-sik Kim

Sang-Min Lee

Jin-Hee Kang

Jin-hee Kang

Seong-woo Cho

Soon-Mok Kwon

Tetsuya Shigeta

Jae-seok Kim

Jin-mo Kang

Sung-Kyu Park

Yasuhiro Nishida

Ji-Young Kang

Dong-Ho Yoo

Jae-Seok Kim

Ji-young Kang

Seong-Mi Park

Jin-Hwan Oh

Jin-Mo Kang

Seong-Woo Cho

Min-Kook Cho

Jerome Crocco

A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.

Light emitting diode apparatus and manufacturing method thereof

A light emitting diode (LED) apparatus is provided. The LED apparatus includes: an LED layer including a plurality of LEDs corresponding to a plurality of sub-pixels; a phosphor layer which is stacked on a top of the LED layer and includes a phosphor corresponding to at least a part of the plurality of sub-pixels; and a filter layer which is stacked on a top of the phosphor layer and includes a plurality of color filters corresponding to the plurality of sub-pixels, and each of the plurality of color filters includes a plurality of absorption films which are spaced from one another at predetermined intervals to absorb external light.

LED apparatus and manufacturing method thereof

A method of manufacturing a light emitting diode (LED) is provided. The method includes forming an n-type semiconductor layer on a substrate, forming an n-type electrode in a first region of the n-type semiconductor layer, forming an active layer in a second region of the n-type semiconductor layer, the second region being a region other than the first region, forming a p-type semiconductor layer on the active layer, and forming a resistance layer by etching regions of the active layer and the p-type semiconductor layer.

Light emitting diode having decreased effective area of active layer, and manufacturing method thereof

A method of manufacturing a light emitting diode is provided. The method includes forming a semiconductor layer on a substrate, forming a mask layer including a plurality of grooves on the semiconductor layer, forming a plurality of nanostructures in the plurality of grooves, respectively, forming an etched region by etching an outer region of the semiconductor layer and an inner region of the semiconductor layer different from the outer region, forming a first electrode on the etched region of the semiconductor layer, forming an insulation layer on the first electrode, and forming a second electrode on the insulation layer and the plurality of nanostructures.

Light emitting diode apparatus and method of manufacturing the same

A method for manufacturing a light emitting diode (LED) apparatus is provided. The method includes forming a plurality of color filters on a glass layer, forming a plurality of light leakage preventing films on the glass layer in a space between the plurality of color filters; forming a plurality of conductive materials on a surface of each of the plurality of light leakage preventing films opposite to the glass layer; and bonding a plurality of light emitting diodes with the plurality of conductive materials to correspond to the plurality of color filters, respectively.

Light emitting diode apparatus and method for manufacturing the same

Disclosed is a method for detecting false alarm. The method includes receiving a measured value that is measured when an alarm is generated from a target for monitoring, measuring non-similarity between the measured value that is measured when the alarm is generated and a pre-stored normal pattern, measuring non-similarity between the measured value and pre-stored measured values related to a past false alarm if the non-similarity exceeds a predetermined threshold value and providing the generated alarm to a user if the non-similarity between the measure value and the pre-stored related values related to the past false alarm exceeds the predetermined threshold value.

Method for detecting false alarm

Disclosed is a method for calculating an error rate of alarm that reports a failure of facility, calculating a true probability and a false probability of alarms generated for each time zone by a past failure record data and calculating the error rate of the alarm at a rate of the false probability to the true probability of the alarms generated for each time zone.

Method for calculating error rate of alarm

Growing community of inventors

Seoul, South Korea

Ji-Hoon Kang