Electronics and Telecommunications Research Institute

University-Industry Cooperation Group of Kyung Hee University

Ji Hoon Jeon

Seung Youl Kang

Seungeon Moon

Jong Pil Im

Jeong Hun Kim

Bae Ho Park

Sung-Min Yoon

Chansoo Yoon

Jiyong Woo

The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.

Memory device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Ji Hoon Jeon