Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Corporation

Kia Motors Corporation

Nhn Corporation

Inha University Research and Business Foundation

Ji Hoon Choi

Jae Young Ahn

Hong Suk Kim

Sung Gil Kim

Jeong Hoon Kang

Phil Ouk Nam

Seulye Kim

Phil Soo Chang

Kab Jin Jun

Jung Ho Kim

Han Jin Lim

Wan Gi Park

Jung Hee Lee

In Ju Lee

Seung Oh Kim

Jung Sang Yu

Jeong Il Park

Sang Wook Kim

Hyeong Joon Seo

Eung Ryeol Seo

Hyun Joo Kim

Hyun Mook Kim

Kyung Ryun Shin

In Cheol Jang

Young Myung Son

Bong Wha Kwak

Doo Pil Kim

Seul Ye Kim

Kyung Rae Cho

Jin Tae Noh

Sang Bum Kim

Tae Jin Park

Yong Jong Park

Hyung Joon Kim

Jun Young Kim

Sang Jin Lee

Min Sung Kim

Sang Yeon Pyo

Seon Ju Lee

Dong Ha Jung

Jung Hwan Kim

Jeong Su Han

Ji Sung Kim

Jong Sung Park

Jae Ryong Park

Jin Kyu Choi

Hoon Wee

Eun Suk Bang

Jong Su Jeon

Amitoj Singh

Kwan Woo Hong

Jin Wook Choi

Byung Cheol Song

Sung Jin Cho

Dong Pil Seo

Chul Yong Cho

Dong Ik Lee

Kyung Mok Yoo

Hyo Sang Lee

In Yong Hwang

Kwang Su Heo

In-yong Hwang

Youn Sik Lee

Nam Ki Sul

Dong Yoon Choi

Beom Soo Cho

Gyu Sung Na

Jae Sin Kim

Ki Sun Park

Sang Young Kweon

Jae Ho Baek

Sang Hyeok Lee

Ji Seoung Kim

Mi Jung Lee

Seong Su Jeong

Karma Bhutia

Je Hong Min

Kalo Jin Jun

Marenne Pierre

Radiator grille for an automobile

Radiator grill for car

Front bumper for an automobile

Car front bumper

A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

Vertical memory device with a channel layer in a stacked dielectric layer

Provided is a washing machine including a rib extending outward from a central portion of a rear portion of a tub. One end of the rib is provided adjacent to the central portion of the tub, the other end of the rib is provided adjacent to an outer side of the tub, and since a width of the one end of the rib is greater than a width of the other end of the rib, thereby maintaining efficient rigidity against stress generated in the rear portion of the tub. Further, in order to secure rigidity against stress due to vibrations generated by a driving motor, an additional rib is included between a side to which the driving motor is coupled and the outer side of the tub, thereby efficiently maintaining rigidity against additional stress.

Laundry machine

Disclosed is a washing machine and a home appliance including a plurality of doors, a damper configured to buffer pivoting of the plurality of doors, and a structure by which each of the plurality of doors smoothly opened/shut.

Washing machine and home appliance

Semiconductor device including dielectric layer

A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.

Semiconductor device and method for fabricating the same

A washing machine includes a plurality of suspension units through which a tub is supported by a cabinet, and a stabilizer unit mounted to the tub. When horizontal vibration displacement of the tub occurs by unbalance mass during washing/dehydration processes, the washing machine limits tub displacement according to the attenuation effect caused by torsional force and bending force of the stabilizer unit, resulting in reduction of excessive vibration.

Washing machine

Disclosed herein is a washing machine including a damping device to be operable according to vibration displacement. In a washing machine including a damping device provided to damp a vibration transferred from a washing tub, the damping device includes a suspension member, a damping unit provided to move along the suspension member, and a friction unit provided in the damping unit to form a frictional force with the suspension member, and the friction unit is disposed while being spaced apart from an inner surface of the damping unit to be selectively movable depending on a level of the vibration of the washing tub.

Damping device and washing machine including the same

Growing community of inventors

Hwaseong-si, South Korea

Ji Hoon Choi