Skhynix Inc.

Samsung Electronics Co., Ltd.

Ji-Hoon Ahn

Kee-Jeung Lee

Kyung-Woong Park

Kwon Hong

Yun-Hyuck Ji

Beom-Yong Kim

Kwan-Woo Do

Seung-Mi Lee

Woo-Young Park

Jae-Hyoung Koo

Seung-Eon Ahn

A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.

Method for fabricating semiconductor device

A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.

Method for fabricating capacitor with high aspect ratio

Growing community of inventors

Gyeonggi-do, South Korea

Ji-Hoon Ahn