United Semiconductor (xiamen) Co., Ltd.

Ji He Huang

Wen Yi Tan

Chih-Chien Huang

William Zheng

Shih-Feng Su

The invention provides a semiconductor cleaning step, which comprises the following steps: providing a chamber with a bottom surface and a sidewall, the chamber contains a heater on the bottom surface, performing a first deposition step to leave a residual layer on the sidewall of the chamber, performing a carbon deposition step to form a carbon layer on at least the surface of the heater, and performing a plasma cleaning step to simultaneously remove the residual layer on the sidewall of the chamber and the carbon layer on the bottom surface.

Semiconductor cleaning step

A semiconductor structure and a method for forming the same are disclosed. The method includes the steps of forming a first dielectric layer on a substrate, forming a plurality of first interconnecting structures in the first dielectric layer, forming at least a trench in the first dielectric layer and between the first interconnecting structures, performing a sputtering deposition process to form a second dielectric layer on the first dielectric layer, wherein the second dielectric layer at least partially seals an air gap in the trench, and forming a third dielectric layer on the second dielectric layer.

Semiconductor structure and method for forming the same

An MIM capacitor includes a semiconductor substrate having a conductor layer thereon, a dielectric layer overlying the semiconductor substrate and the conductor layer, and a first capacitor electrode disposed on the dielectric layer. The first capacitor electrode partially overlaps with the conductor layer when viewed from above. A capacitor dielectric layer is disposed on the first capacitor electrode. A second capacitor electrode is disposed on the capacitor dielectric layer. At least one via is disposed in the dielectric layer and electrically connecting the first capacitor electrode with the conductor layer.

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Suzhou, China

Ji He Huang