Samsung Electronics Co., Ltd.

Ji-Eun Han

Cheol Kyu Kim

Yong-Joon Choi

Bo-un Yoon

Si-Young Choi

Myeong-Cheol Kim

Ho-young Kim

Byoung-ho Kwon

Hee-Don Jeong

Geum-jung Seong

Jae-Kwang Choi

Bo-Kyeong Kang

Se-jung Park

Suk-Hoon Jeong

Do-hyoung Kim

GeumJung Seong

Bok-Young Lee

Hak-Sun Lee

Myeongcheol Kim

Dong-hoon Khang

Yoo-Jung Lee

Haegeon Jung

In-Hee Lee

Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Semiconductor device and method for fabricating the same

A method includes forming a first etch target layer and a first mask layer on a substrate. Sacrificial patterns extending in a first direction are formed on the first mask layer in a second direction. Spacers are formed on sidewalls of the sacrificial patterns. After removing the sacrificial patterns, the first mask layer is etched using the spacers as an etching mask to form first masks. Second masks are formed on sidewalls of each first mask to define a third masks including each first mask and the second masks on sidewalls of each first mask. The first etch target layer is etched using the first and third masks as an etching mask to form first and second patterns in the first and second regions, respectively. Each first pattern has a first width, and each second pattern has a second width greater than the first width.

Method of forming minute patterns and method of manufacturing a semiconductor device using the same

The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed.

Semiconductor device, electronic device including the same and manufacturing methods thereof

Growing community of inventors

Incheon, South Korea

Ji-Eun Han