United Microelectronics Corp.

Jheng-Jie Huang

Ping-Chia Shih

Chi-Cheng Huang

Kun-I Chou

Yu-Chun Chang

Ling-Hsiu Chou

Tseng-Fang Dai

A method for manufacturing a silicon-oxide-nitride-oxide-silicon non-volatile memory cell includes following steps. An implant region is formed in a substrate. A first oxide layer, a nitride layer, and a second oxide layer are formed and stacked on the substrate. A density of the second oxide layer is higher than a density of the first oxide layer. A first photoresist pattern is formed on the second oxide layer and corresponding to the implant region. A first wet etching process is then performed to form an oxide hard mask. A second wet etching process is performed to remove the nitride layer exposed by the oxide hard mask to form a nitride pattern. A cleaning process is then performed to remove the oxide hard mask and the first oxide layer exposed by the nitride pattern, and a gate oxide layer is then formed on the nitride pattern.

Growing community of inventors

Nantou County, Taiwan

Jheng-Jie Huang