United Microelectronics Corp.

Jhen-Siang Wu

Cheng-Tung Huang

Yi-Ting Wu

Jen-Yu Wang

Yung-Ching Hsieh

Jian-Jhong Chen

Po-Chun Yang

Bo-Chang Li

Chun-Hsien Huang

Yu-Tse Kuo

Shu-Ru Wang

Chun-Yen Tseng

Chang-Hung Chen

Chih-Wei Tsai

Hsin-Chih Yu

Ya-Lan Chiou

Zong-Sheng Zheng

A layout pattern for magnetoresistive random access memory (MRAM) includes a first magnetic tunneling junction (MTJ) pattern on a substrate, a second MTJ pattern adjacent to the first MTJ pattern, and a third MTJ pattern between the first MTJ pattern and the second MTJ pattern. Preferably, the first MTJ pattern, the second MTJ pattern, and the third MTJ pattern constitute a staggered arrangement.

Layout pattern for magnetoresistive random access memory

A memory includes (n&#x2212;1) non-volatile cells, (n&#x2212;1) bit lines and a current driving circuit. Each of the (n&#x2212;1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n&#x2212;1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n&#x2212;1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n&#x2212;1) non-volatile cells.

Memory including non-volatile cells and current driving circuit

A first MRAM set includes a first transistor and a second transistor. The first transistor includes a first gate structure, a first source/drain doping region and a first common source/drain doping region. The second transistor includes a second gate structure, a second source/drain doping region and the first common source/drain doping region. A second MTJ is disposed on the second transistor. The first common source/drain doping region electrically connects to the second MTJ. A first MTJ is disposed on the first transistor. The sizes of the first MTJ and the second MTJ are different. The second MTJ connects to the first MTJ in series. A bit line electrically connects the first MTJ. A source line electrically connects to the first source/drain doping region and the second source/drain doping region.

2-transistor 2-magnetic tunnel junction (2T2MTJ) MRAM structure

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Kaohsiung, Taiwan

Jhen-Siang Wu