Corning Precision Materials Co., Ltd.

Jhee Mann Kim

Ki Yeon Lee

Hyung Soo Moon

Yoon Seuk Oh

Choon Bong Yang

Cheol Min Park

Bo Mi Kim

The present invention relates to a method for manufacturing a light-emitting diode package, and more specifically to a method for manufacturing a light-emitting diode package that does not need an additional color conversion frit heat-treatment process and cutting process after bonding between the color conversion frit and a light-emitting diode chip. To this end, the present invention provides a method for manufacturing a light-emitting diode package characterized in that the present invention comprises: a color conversion frit formation step for forming a color conversion frit in which phosphor is included on a substrate; a color conversion frit transcription step for transcribing the color conversion frit formed on the substrate from the substrate to a transcription film; and a color conversion frit bonding step for bonding the color conversion frit transcribed on the transcription film onto a light-emitting diode package.

Method for manufacturing light-emitting diode package

The present invention relates to a color-converting substrate of a light-emitting diode and a method for producing same, and more specifically to a color-conversion substrate of a light-emitting diode capable of completely protecting the quantum dots (QDs) supported in the interior from the exterior as hermetic sealing is possible, and a method for producing the color-converting substrate. To that end, provided are a color-conversion substrate of a light-emitting diode and a method for producing same, the color-conversion substrate of a light-emitting diode comprising: a first substrate arranged on a light-emitting diode; a second substrate disposed facing the first substrate; a first sealing material disposed on the upper surface of the first substrate so as to section a grooved accommodating space having the first substrate as the bottom surface thereof; QDs filling the accommodating space; and a second sealing material, disposed between the second substrate and the first sealing material, having a shape corresponding to the first sealing material, wherein the second sealing material is made of material having a comparatively higher laser absorption rate in the infrared region than that of the first sealing material.

Color-converting substrate of light-emitting diode and method for producing same

The present invention relates to a color-converting substrate of a light-emitting diode and a method for producing same, and more specifically to a color-converting substrate of a light-emitting diode capable of completely protecting the quantum dots (QD) supported in the interior from the exterior as hermetic sealing is possible, and a method for producing the color-converting substrate. To that end, provided are a color-conversion substrate of a light-emitting diode and a method for producing the color-conversion substrate, the color-conversion substrate of a light-emitting diode comprising: a first substrate and a second substrate arranged facing each other on a light-emitting diode; a sheet, having a hole, arranged in between the first and second substrates; QDs filling the hole; and sealing material disposed in between the first substrate and the lower surface of the sheet and in between the second substrate the upper surface of the sheet, wherein the sealing material is disposed along the edge of the hole, and the sheet is made of a substance allowing laser sealing of the sealing material, first substrate and second substrate.

Color-converting substrate for light-emitting diode and method for producing same

The present invention relates to a substrate for changing the color of a light emitting diode and a method for producing same and, more particularly, to a substrate for changing the color of a light emitting diode and a method for producing same, wherein the substrate may be hermetically sealed so that quantum dots (QD) contained inside may be completely protected from the outside and emission efficiency of the light emitting diode may be enhanced.

Growing community of inventors

Chungcheongnam-do, South Korea

Jhee Mann Kim