Advanced Semiconductor Engineering, Inc.

Jhao-Cheng Chen

Wen-Long Lu

Huang-Hsien Chang

Shao Hsuan Chuang

Ching-Ju Chen

Tse-Chuan Chou

A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

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Kaohsiung, Taiwan

Jhao-Cheng Chen