Abb Schweiz Ag

Jérôme Assal

Stefan Kaufmann

Egon Herr

The invention relates to a power semiconductor module having at least one semiconductor chip () made of a semiconductor material and having a first and a second main electrode (), a first and a second main connection () and a contact lamina () in electrical contact with the first main electrode () and the first main connection (). The contact lamina () contains an alloying partner which can form a eutectic with the semiconductor material. According to the invention, the contact lamina is coated with an electrically conductive protective layer () that prevents formation of a fixed material connection between the first main electrode () and the contact lamina ().

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Zurich, Switzerland

Jérôme Assal