Korea Institute of Science and Technology

Seoul National University

Jeung-hyun Jeong

Won Mok Kim

Taek Sung Lee

Jong-Keuk Park

Byung-ki Cheong

Kyeong Seok Lee

Dae-Hwan Kang

Suyoun Lee

In Ho Kim

Young Joon Baik

Hyun Seok Lee

Ki-bum Kim

Wook Seong Lee

Byung Ki Cheong

Gyu Weon Hwang

Gee Yeong Kim

Hyeonggeun Yu

Seung Hee Han

Ki Bum Kim

Tae-Yon Lee

Sungmin Park

HyunJae Lee

Phillip Lee

InHo Kim

Jung-hyeon Kim

Hae Jung Son

Doh-Kwon Lee

Doh Kwon Lee

In-Ho Kim

Injeong Shin

Seonghoon Jeong

Jooho Kim

Ji Yeong Kim

Dong Ho Anh

Eunpyung Choi

Jangmi Lee

Han Ju Jung

Eun Pyung Choi

Gyoungsik Kim

Sung-yoon Joe

Wook Yeon Hwang

Dong-Ho Ahn

The present disclosure relates to a thin-film solar cell capable of independently adjusting transparency and color, which is capable of selectively controlling transmittance while independently adjusting external and internal colors within a range in which degradation of photoelectric conversion efficiency is minimized, and a method of manufacturing the same, and the thin-film solar cell capable of independently adjusting transparency and color according to the present disclosure includes a structure in which a back transparent electrode, a light absorption layer, a front transparent electrode, and a front color layer are sequentially stacked on a transparent substrate, in which a light transmission part region, to which the back transparent electrode is exposed, is formed by removing the front color layer, the front transparent electrode, and the light absorption layer.

Thin-film solar cell capable of independently adjusting transparency and color and method of manufacturing the same

Provided is a see-through thin film solar cell module including a transparent substrate, a first back electrode deposited on a first surface of the transparent substrate, a second back electrode deposited on the first back electrode and including a MoSelayer, an absorber layer deposited on the second back electrode and including selenium (Se) or sulfur (S), and a laser scribing pattern formed by partially removing the absorber layer.

See-through thin film solar cell module and method of manufacturing the same

Provided is a method of manufacturing a high efficiency flexible thin film solar cell module including a see-thru pattern. The method of manufacturing a flexible thin film solar cell module includes: sequentially forming a light-absorbing layer, a first buffer layer, and a first transparent electrode layer on the release layer; forming a second buffer layer on the exposed bottom surface of the light-absorbing layer; forming a P2 scribing pattern by removing at least one portion of each of the first buffer layer, the light-absorbing layer, and the second buffer layer; forming a second transparent electrode layer on the second buffer layer and the first transparent electrode layer exposed by the P2 scribing pattern; and forming a P4 see-thru pattern by selectively removing at least one portion of the first buffer layer, the light-absorbing layer, the second buffer layer, and the second transparent electrode layer.

Manufacturing method of flexible thin film solar cell module and the flexible thin film solar cell module using the same

According to an aspect of the present invention, there is provided a method of manufacturing a compound thin film, which includes configuring an electrodeposition circuit by connecting an electrolytic solution, which is manufactured by mixing a predetermined precursor with a solvent, and an electrochemical cell, which includes a working electrode in a form of an electrode at which a specific pattern is patterned on a predetermined substrate, to a voltage application device or a current application device, and applying a reduction voltage or current to the working electrode using the voltage application device or the current application device, and selectively electrodepositing a thin film in some region of the electrode along a shape of the electrode at which the specific pattern is patterned.

Method of manufacturing light transmission type compound thin film, compound thin film manufactured therefrom, and solar cell including the same

Provided are a thin-film solar cell module structure and a method of manufacturing the same.

Thin-film solar cell module structure and method of manufacturing the same

Disclosed is a conjugated polymer for an organic solar cell. The proportion of units containing no alkyl thiophene moieties in the conjugated polymer can vary to make the conjugated polymer suitable for use as an electron-donating organic semiconductor material in a small-area or large-area organic solar cell. Therefore, the use of the conjugated polymer ensures high energy conversion efficiency of the organic solar cell.

Conjugated polymer for organic solar cell and organic solar cell including the same

A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.

Method for manufacturing thin film solar cell

A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Plasma deposition apparatus and method

Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.

Method for growing thin film

A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.

Bio-sensor and method of manufacturing the same

A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.

Optical recording medium having super-resolution structure for improvement of reproducing stability and noise characteristic in low frequency band

A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).

Super-resolution material and high density optical information storage medium using same

The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof

The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

Phase change memory cell with transparent conducting oxide for electrode contact material

A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.

Growing community of inventors

Seoul, South Korea

Jeung-hyun Jeong