Energy Conversion Devices, Inc.

Other

Jesus Gonzalez-Hernandez

Stanford R Ovshinsky

Stephen J Hudgens

Wolodymyr Czubatyj

Sergey A Kostylev

David A Strand

Benjamin S Chao

Hellmut Fritzsche

David D Allred

Qiuyi Ye

On Van Nguyen

Quiyi Ye

A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Homogeneous compositions of microcrystalline semiconductor material,

Homogeneous composition of microcrystalline semiconductor material,

A multilayered article includes at least one periodically repeating set including a layer of amorphous crystallizable material and a layer of crystallization inhibiting material in generally superposed relationship. The layer of crystallizable material has its crystallization temperature raised by the presence of the inhibiting layer. Also disclosed are methods for the fabrication of the multilayered article.

Multilayered article including crystallization inhibiting layer and

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Royal Oak, MI, United States of America

Jesus Gonzalez-Hernandez