Freescale Semiconductor,inc.

Jesse Yanez

Mark Douglas Hall

Anadi Srivastava

Raghaw S Rai

A method is provided for making a silicided gate (). In accordance with the method, a semiconductor structure () is provided which comprises a semiconductor substrate (), a gate () disposed on the semiconductor substrate, and a spacer () adjacent to the gate. The structure is subjected to a first etch which exposes a first lateral portion of the gate. An implant () is then created in a region adjacent to the spacer. The structure is then subjected to a second etch which exposes a second lateral portion of the gate electrode, and a layer of silicide () is formed which extends over the first and second lateral portions of the gate.

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New Braunfels, TX, United States of America

Jesse Yanez