Corner Star Limited

Jesse Samsonov Appel

Stephan Haringer

Roberto Scala

Martin Jeffrey Binns

Luigi Bonanno

Armando Giannattasio

Valentino Moser

A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.

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O'Fallon, MO, United States of America

Jesse Samsonov Appel