University of Copenhagen

Jesper Nygård

Thomas Sand Jespersen

Peter Krogstrup

Charles M Marcus

Ferdinand Kuemmeth

Karl Petersson

Thorvald Larsen

Martin Bjergfelt

Damon Carrad

The present disclosure relates to a method for manufacturing of specially designed substrates for growth of nanostructures and patterned growth on said nanostructures. The present disclosure further relates to nanostructures, in particular hybrid semiconductor nanostructures with patterned growth of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of quantum devices that have not been contaminated by ex-situ processes.

Method and substrate for patterned growth on nanoscale structures

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Semiconductor Josephson junction and a transmon qubit related thereto

The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Nanoscale device composing an elongated crystalline nanostructure

The present disclosure relates to a method for producing a network of interconnected nanostructures comprising the steps of: providing a substantially plane substrate; growing a plurality of elongated nanostructures from the substrate; kinking the growth direction of at least a part of the nanostructures such that at least part of the kinked nanostructures are growing in a network plane parallel to the substrate, and creating one or more network(s) of interconnected kinked nanostructures in the network plane, wherein a dielectric support layer is provided below the network plane to support said network(s) of interconnected nanostructures.

Network of nanostructures as grown on a substrate

Nanoscale device comprising an elongated crystalline nanostructure

Semiconductor josephson junction and a transmon qubit related thereto

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København Ø, Denmark

Jesper Nygård