Micron Technology Incorporated

Jeslin J Wu

Swapnil Lengade

John David Hopkins

Kunal Shrotri

Adam L Olson

Ramey M Abdelrahaman

Rohit Kothari

Chandra S Tiwari

Naiming Liu

Jeremy F Adams

Carlo Mendoza Orofeo

Chandra Tiwari

Kadir Abdul

A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

Semiconductor devices comprising steps

Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies and methods of forming integrated assemblies

A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

Microelectronic devices with nitrogen-rich insulative structures

Methods of forming a semiconductor device

Growing community of inventors

Boise, ID, United States of America

Jeslin J Wu