Applied Materials, Inc.

Applied Komatsu Technology, Inc.

Other

Gamma Precision Technology, Inc.

Mtm Engineering, Inc.

Jerry Yuen Wong

Masato M Toshima

Kenneth S Collins

David Walter Groechel

Peter R Keswick

Jeffrey S Marks

Chan-Lon Yang

Mei Yin Chang

Dan Maydan

David N Wang

Craig A Roderick

Tetsuya Ishikawa

Gerald Z Yin

John M White

Michael Robert Rice

Sasson Roger Somekh

Kam S Law

Jay D Pinson, Ii

David K Cheng

Lawrence C Lei

Douglas Buchberger

John R Trow

Jon Mohn

Vladimir J Zeitlin

Dana L Andrews

Kenneth R Stalder

Hiroji Hanawa

David Wingto Cheung

Alfred W Mak

Shingo Kadomura

Norman L Turner

Robert W Wu

Cissy S Leung

Robert J Steger

Makoto Nagashima

Graham W Hills

Simon W Tam

Paul Arleo

Haruhiro (Harry) Goto

Ching C Tang

Naoaki Kobayashi

David Nin-Kou Wang

Jon Henri

Regga Tekeste

Tetsuhiko Sambei

Junichi Fujimoto

Ronald P Reade

There is provided a method used for processing an organic low dielectric constant insulating film to a desired shape for enabling facilitated stripping of an organic film formed on top of the organic low dielectric constant insulating film. Specifically, there is provided a method for stripping an organic film formed on a layered unit having at least an organic low dielectric constant insulating film. This method includes generating radicals in a gas mainly composed of fluorine-based gas, and stripping the organic film by the generated radicals.

Method for stripping organic based film

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Process used in an RF coupled plasma reactor

A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Plasma reactor with heated source of a polymer-hardening precursor

A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.

Bomine and iodine etch process for silicon and silicides

A chamber for etching substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member that is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting apparatus and the support member, and in a retracted position to clamp the substrate to the support member. The chamber is especially adapted to etching substrates requiring high power densities, such as substrates having aluminum films, without causing arcing. The chamber may include: insulative members disposed between the support member and the clamping and lifting apparatus, spacers disposed in the clamping and lifting apparatus for providing a gap between the clamping and lifting apparatus and the substrates, and lift pins disposed in the support member for moving the substrates toward or away from the support member. The substrate receiving faces may be non-parallel to each other.

Method and apparatus for etching film layers on large substrates

A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

Plasma reactor and processes using RF inductive coupling and scavenger

A chamber for processing substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator is disposed on the chamber wall to move the clamping and lifting assembly between the extended and retracted positions.

An apparatus is disclosed for determining the concentration of a fluid. In one aspect of the invention an apparatus for detecting the ionic concentration of a fluid is provided. The ionic concentration detecting apparatus may include a resonance coil or other suitable receiver that arranged to be influence by the fluid being monitored. The resonance coil is driven by a high frequency signal having a frequency in the range of 10-100 MHz. A detector is provided to measure the losses experienced by the resonance coil. In another aspect of the invention, an ultrasonic based density detecting apparatus for detecting the density of the fluid is provided. The ionic concentration detecting device may be used in conjunction with the density determining device to provide concentration detecting capabilities for solutions having multiple constituents. One particularly beneficial application of the invention is for determining the concentration of an acidic solution used in a wafer wet cleaning step of a semiconductor fabrication process.

Fluid concentration detecting apparatus

Silicon scavenger in an inductively coupled RF plasma reactor

A plasma reactor containing within the processing chamber pieces of magnetic material located to reduce and/or substantially eliminate systematic processing rate nonuniformities. These pieces are placed inside the chamber or attached inside of the pedestal adjacent to the top of the pedestal, where the wafer is to be located for processing. The thickness, shape and magnetic permeabilities of these magnetic pieces are selected to optimize process uniformity.

Uniformity for magnetically enhanced plasma chambers

Method for determining temperature ranges at which a selected gas evolves from a specimen of a selected material, bulk or surface of a metal, semiconductor, or insulator, and the probable source of that gas in each such temperature range. A specimen is placed in an evacuated and baked-out tube, and the specimen temperature T is increased according to a selected time-dependent temperature pattern over a temperature range. As temperature T(t) increases, pressure p(t) of any gas evolving in the tube is measured for a sequence of times t. A total pressure derivative, dp/dT=(dp/dt)(dT/dt).sup.-1, is determined, identifying one or more peak temperatures, each having a peak temperature range corresponding to specimen emission of at least one gas by breaking a bond containing an atom or molecule of that emitted gas. Partial pressure rises in the tube at each peak temperature are monitored and converted to an equivalent gas concentration. In a second embodiment, two tubes, with only one containing a specimen, are used for analyzing the differential pressure .DELTA.p=p1- p2 and differential pressure derivative d(.DELTA.p)/dT. In a third embodiment, both tubes contain specimens, and one or more peak temperatures are identified. In each embodiment, composition, partial pressures and concentrations of gases evolved at a peak temperature are optionally determined by residual gas analysis of another specimen in another tube, heated to and held at a peak temperature.

Hydrogen evolution analyzer

A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

Magnetic field-enhanced plasma etch reactor

An improved process is described for forming one or more vias through an insulation layer by plasma etching to an underlying metal layer without depositing etch residues, including metal sputtered from the underlying metal layer, onto the sidewalls of the vias, which comprises, in one embodiment, using in the gaseous etchant one or more 3-6 carbon fluorinated hydrocarbons having the formula C.sub.x H.sub.y F.sub.z, wherein x is 3 to 6, y is 0 to 3, and z is 2x-y when the fluorinated hydrocarbon is cyclic and z is 2x-y+2 when the fluorinated hydrocarbon is noncyclic. One or more other fluorine-containing gases may also be used as long as the 3-6 carbon fluorinated hydrocarbons comprise at least 10 volume % of the fluorine-containing gas mixture. The fluorinated hydrocarbon gas or fluorine-containing gas mixture also may be mixed with up to 90 volume % total of one or more inert gases to control the taper of the via walls. At least about 5 sccm of the total gas flow must comprise a 3-6 carbon fluorinated hydrocarbon gas, regardless of the volume % of 3-6 carbon fluorinated hydrocarbon gas in the total gas stream flow. In another embodiment, a controlled amount of one or more nitrogen-containing gases are used with one or more fluorine-containing etchant gas wherein the amount of nitrogen-containing gas ranges from about 1 volume part nitrogen-containing gas per 15 volume parts fluorine-containing gas to about 1 volume part nitrogen-containing gas per 2 volume parts fluorine-containing gas.

Process for forming a via in an integrated circuit structure by etching

A reactor chamber self-cleaning process is disclosed which uses a fluorocarbon-containing gas and, preferably, C.sub.2 F.sub.6 in combination with oxygen. The two-step process involves, first, a chamber-wide etch at relatively low pressure and with relatively large separation between the gas inlet manifold and the wafer supports which are the RF electrodes and, second, a local etch step which uses a relatively high chamber pressure and smaller electrode spacing, to complete the cleaning of the RF electrodes.

Reactor chamber self-cleaning process

Growing community of inventors

Union City, CA, United States of America

Jerry Yuen Wong