International Rectifier Corporation

Nitronex Corporation

Infineon Technologies Americas Corp.

Other

Jerry Wayne Johnson

Robert Joseph Therrien

Allen W Hanson

Edwin Lanier Piner

Sameer Singhal

Kevin J Linthicum

John Claassen Roberts

Andrei Vescan

Jeffrey D Brown

Pradeep Rajagopal

Walter H Nagy

James W Cook, Jr

Ricardo M Borges

Apurva D Chaudhari

Robert J Therrien

Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.

Methods of manufacturing gallium nitride devices

Gallium nitride material devices and associated methods

Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.

Gallium nitride devices

Gallium nitride devices with conductive regions

Gallium nitride devices with vias

Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., PET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.

Gallium nitride devices with electrically conductive regions

Gallium nitride material devices and related processes are described. In some embodiments, an N-face of the gallium nitride material region is exposed by removing an underlying region.

Gallium nitride material processing and related device structures

Method for forming gallium nitride devices with conductive regions

Gallium nitride material devices including conductive regions

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Gallium nitride material transistors and methods associated with the same

An apparatus for sealing a turbine against leakage of a working fluid comprising at least one radially displaceable sealing ring, coaxially disposed about a rotating member of the turbine from a stationary member of the turbine, which sealing ring undergoes radial displacements that are coupled to radial displacements of the rotating member, such that a design radial clearance is substantially maintained without damage to the apparatus.

Floating sealing ring

Gallium nitride material devices including conductive regions and methods associated with the same

Semiconductor device-based chemical sensors and methods associated with the same are provided. The sensors include regions that can interact with chemical species being detected. The chemical species may, for example, be a component of a fluid (e.g., gas or liquid). The interaction between the chemical species and a region of the sensor causes a change in a measurable property (e.g., an electrical property) of the device. These changes may be related to the concentration of the chemical species in the medium being characterized.

Semiconductor device-based sensors

Growing community of inventors

Raleigh, NC, United States of America

Jerry Wayne Johnson