Taiwan Semiconductor Manufacturing Comp. Ltd.

Jerry Tzou

Szu Wei Lu

Kuo-Chin Chang

Clinton Chao

Tjandra Winata Karta

Ann Luh

Chen-Shien Chen

Szu-Wei Lu

Mirng-Ji Lii

Hua-Shu Ivan Wu

A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 &#x3bc;m. A plurality of traces is formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. A semiconductor chip may be mounted on the solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.

Silicon-based thin substrate and packaging schemes

A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 &#x3bc;m. A plurality of traces are formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. A semiconductor chip may be mounted on the solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.

A semiconductor structure includes a first substrate and a second substrate bonded over the first substrate. The first substrate includes a passivation layer formed over the first substrate. The passivation layer includes at least one first opening exposing a first bonding pad formed over the first substrate. The second substrate includes at least one second opening aligned with and facing the first opening.

Bonding structures and methods of forming bonding structures

A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 &#x3bc;m. A plurality of through-hole vias are formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.

A semiconductor device includes a semiconductor substrate having top and bottom surfaces, the top surface having at least one device region thereon. At least one trench opening is formed through the substrate from the bottom surface and connecting to the device region. A layer of conductive material is deposited in the at least one trench opening and partially fills the trench opening. A layer of conductive adhesive is deposited over the layer of conductive material and fills a remaining portion of the trench opening.

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Hsin-Chu, Taiwan

Jerry Tzou