Nxp USA, Inc.

Jerry Rudiak

Ibrahim S Kandah

Fred T Brauchler

Burton Jesse Carpenter

David D Putti

A controller for a power converter device, wherein the controller is configured to provide for switching of a switching component of the power converter device based on a feature in a control signal, sample at least one parameter of the power converter device upon expiry of a predetermined time period after switching of the switching component; and output the sample of the at least one parameter.

Controller

A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package leadframe having a first die pad and a second die pad separated from the first die pad. A first semiconductor die is attached to the first die pad of the package leadframe. A second semiconductor die is attached to the second die pad of the package leadframe. A communication device is attached over the second semiconductor die. The communication device is configured to communicate wirelessly with the second semiconductor die.

Semiconductor device having galvanic isolation and method therefor

A power module may include multiple transistors each respectively having a first current-carrying terminal coupled to a voltage supply, a second current-carrying terminal coupled to an output node, and a control terminal, multiple output driver stages each coupled to the control terminal of a respectively different transistor of the transistors, and a driver module. The driver module may include multiple pre-drivers each coupled to a respectively different output driver stage of the output driver stages and a control module having an input and having multiple outputs coupled to the pre-drivers. The control module may be configured to receive a control signal at the input and to selectively control the pre-drivers to drive at least a subset of the plurality of transistors via the output driver stages based on the control signal.

Power module with segmented output driver

A method for in situ threshold voltage determination of a semiconductor device includes sourcing a current to a first terminal of the semiconductor device. A gate terminal of the semiconductor device is driven with a plurality of gate levels. Each gate level includes one of a plurality of different gate voltages. A transistor voltage is measured between the first terminal and a second terminal of the semiconductor device during each gate level. The respective gate voltage is stored in response to the semiconductor device voltage transitioning past a voltage limit. A temperature dependent threshold voltage of the semiconductor device is estimated for a first measured temperature measured during the storing of the stored gate voltage from a previously stored gate voltage and a second measure temperature.

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Phoenix, AZ, United States of America

Jerry Rudiak