The Boeing Company

Hughes Aircraft Company

Jerry R Kukulka

Maggy L Lau

Richard Roland King

James H Ermer

Peter Hebert

Hojun Yoon

David R Lillington

A solar cell assembly and method are disclosed. The solar cell assembly comprises a substrate having a front surface and a back surface, wherein the substrate has a p-n junction providing reverse bias protection, and wherein the substrate functions as a bypass diode. The solar cell assembly further comprises a multijunction solar cell having a plurality of solar cell layers, wherein the multijunction solar cell has a first surface and a second surface, the first surface being attached to the front surface of the substrate. The solar cell assembly further comprises an electrical connector element positioned adjacent the front surface of the substrate and the first surface of the multijunction solar cell, a first contact coupled to the back surface of the substrate, and at least one second contact coupled to a portion of the second surface of the multijunction solar cell.

Solar cell assembly with combined handle substrate and bypass diode and method

A solar cell has an active semiconductor structure and a back electrical contact overlying and contacting an active semiconductor structure back side. A front electrical contact is applied overlying and contacting the active semiconductor structure front side. The front electrical contact has multiple layers including a titanium layer overlying and contacting the active semiconductor structure front side, a diffusion layer overlying and contacting the titanium layer, a barrier layer overlying and contacting the diffusion layer, and a joining layer overlying and contacting the barrier layer. The front electrical contact may be applied by sequentially vacuum depositing the titanium layer, the diffusion layer, the barrier layer, and the joining layer in a vacuum deposition apparatus in a single pumpdown from ambient pressure. A front electrical lead is affixed overlying and contacting an attachment pad region of the front electrical contact.

Solar cell with high-temperature front electrical contact

A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.

Method of forming a semiconductor structure having metal migration semiconductor barrier layers

A solar cell structure includes a solar cell having a front side and a back side and an active semiconductor structure. The solar cell produces a voltage when the front side is illuminated. The solar cell is protected by a by-pass diode structure including a by-pass diode positioned at the back side of the solar cell. A first electrical interconnection structure extends between the back side of the solar cell and the first diode terminal, and a second electrical interconnection structure extends between the front side of the solar cell and the second diode terminal. An entire length of the second electrical interconnection structure contacts the solar cell.

Solar cell structure with by-pass diode and wrapped front-side diode interconnection

Solar cell with high-temperature front electrical contact, and its fabrication

Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same

A solar cell structure includes a solar cell that produces a voltage when illuminated, and a discrete amorphous silicon by-pass diode. A first by-pass diode terminal of the amorphous silicon by-pass diode is electrically connected to a first side of an active semiconductor structure of the solar cell, and a second by-pass diode terminal of the amorphous silicon by-pass diode is electrically connected to a second side of the active semiconductor structure. Alternatively, the first by-pass diode terminal of the amorphous silicon by-pass diode may be electrically connected to the first side of the active semiconductor structure of the solar cell, and the second by-pass diode terminal of the amorphous silicon by-pass diode may be electrically connected to a second side of the active semiconductor structure of another solar cell.

Solar cell structure utilizing an amorphous silicon discrete by-pass diode

An integrated solar cell-bypass diode assembly is provided by forming at least one recess in the back (non-illuminated) side of the solar cell and placing at least one discrete low-profile bypass diode in respective recesses so that each bypass diode is approximately flush with the back side of the solar cell. Each bypass diode is bonded to the solar cell for anti-parallel connection across the solar cell. The back side of the solar cell is preferably formed with a honeycomb pattern of recesses to reduce the weight of the solar cell while maintaining mechanical strength. The recesses that receive bypass diodes preferably have a rectangular shape that better accommodates the bypass diode.

Growing community of inventors

Santa Clarita, CA, United States of America

Jerry R Kukulka