Texas Instruments Corporation

Other

Jerry D Smith

Lawrence D Dyer

Eugene C Davis

John Britton Robbins

Jerry B Medders

Jennifer M Smith

Franklin L Allen

Vikki S Simpson

Michael Cunningham

Keith J Lindberg

Greg Gopffarth

An apparatus for preventing water leak damage from a bath fixture, the apparatus comprising a first side wall, a second side wall, a first end wall, a second end wall, a top wall, a bottom wall sloping downwardly to an outlet wherein the first and second side walls, the first and second end walls, the top wall, and the bottom wall define a compartment therebetween and wherein the water source pipes of the bath fixture extend upwardly through the bottom wall. The apparatus further includes a waterproof covering that covers the entire inside surfaces of the compartment, and a drain element that connect the outlet of the bottom wall to a drain pipe of the bath fixture. The apparatus may also include at least one removable panel to provide access to water source pipes disposed within the compartment.

Bathroom leak damage prevention apparatus

The protection to the backside of the semiconductor wafer is accomplished by applying a layer of silicon oxide or silicon nitride or other deposited material to the back surface of a semiconductor wafer to protect against particles, scratches, and etching by mild caustic solutions. The layer remains in place during all three processes, edge pre-polish, mirror edge polish, and wafer polish.

Method of surface protection of a semiconductor wafer during polishing

A method for gettering metal atoms (28) from a subsequently contaminated silicon substrate (12) is disclosed. A smoothed or polished first surface (16) has a thin germanium silicon layer (20) deposited thereon. A silicon layer (24) is deposited onto the germanium silicon layer (20) to seal the layer (20) between the substrate (12) and the silicon layer (24). Electronic components (26) are fabricated on a second surface (14) of the silicon substrate (12) which causes the metal atoms (28) to contaminate the substrate as a result of contamination in normal processing (12). As the substrate (12) is heated during normal processing of the devices, metal atoms (28) in the substrate of a result of contamination, diffuse in the substrate (12) to the misfit dislocations at the germanium-silicon (20)/silicon interface.

Backside gettering method employing a monocrystalline germanium-silicon

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Sherman, TX, United States of America

Jerry D Smith