Texas Instruments Corporation

Jeronimo Segovia Fernandez

Peter Smeys

Ting-Ta Yen

Bichoy Bahr

Ali Djabbari

Hassan Omar Ali

One example described herein includes an integrated circuit (IC). The IC includes a substrate having opposing first and second sides. The second side can include a curved surface. The IC also includes a resonator on the first side. A curvature of the curved surface can reflect a property of the resonator.

Spurious mode reduction for electromechanical resonator circuit

An example apparatus includes: a semiconductor substrate; a mechanical resonator supported by the substrate, the mechanical resonator including an array of capacitors; and a plasmonic infrared (IR) absorber including an array of metal structures. The mechanical resonator is between the substrate and the IR absorber.

Methods and apparatus to detect infrared wavelengths using a mechanical resonator with an integrated plasmonic infrared absorber

A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers.

Laterally vibrating bulk acoustic wave resonator

A torque sensor chip including a semiconductor substrate, an acoustic reflector formed on the semiconductor substrate, and first and second Lamb wave resonators (LWRs). The first LWR is formed on a side of the acoustic reflector opposite the semiconductor substrate. The first LWR is at a first angle with respect to an axis of the IC. The second LWR also is formed on the side of the acoustic reflector opposite the semiconductor substrate. The second LWR is at a second angle, different than the first angle, with respect to the axis of the IC.

Lamb wave resonator-based torque sensor

A resonator includes a substrate, an acoustic Bragg mirror disposed above the substrate, and a bottom metal layer disposed above the acoustic Bragg mirror. The resonator also includes a piezoelectric plate disposed above the bottom metal layer. The resonator further includes a top metal layer disposed above the piezoelectric plate. The top metal layer comprises multiple fingers within a single plane and the width of each of the fingers is between 75%-125% of a thickness of the piezoelectric plate.

Highly dispersive bulk acoustic wave resonators

A MEMS resonator is operated at its parallel resonance frequency. An acoustic wave is propagated laterally away from a central region of the MEMS resonator through a piezoelectric layer of the MEMS resonator. The propagating acoustic wave is attenuated with concentric confiners that surround and are spaced apart from a perimeter of an electrode that forms the MEMS resonator.

Piezoelectric resonator with patterned resonant confiners

A micromechanical system (MEMS) resonator includes a base substrate. A piezoelectric layer has a first electrode attached to a first surface of the piezoelectric layer and a second electrode attached to a second surface of the piezoelectric layer opposite the first electrode. The first electrode is bounded by a perimeter edge. A patterned acoustic mirror is formed on a top surface of the first electrode opposite the piezoelectric layer, such that the patterned acoustic mirror covers a border strip of the top surface of the first electrode at the perimeter edge and does not cover an active portion of the top surface of the first electrode.

Using acoustic reflector to reduce spurious modes

Methods, apparatus, systems and articles of manufacture are disclosed to measure a resonant sensor based on detection of group delay. An example apparatus includes a modulation manager configured to query the resonant sensor with a modulated signal including a frequency; and a resonance determiner configured to determine a resonance frequency of the resonant sensor based on a group delay associated with the resonant sensor and the frequency.

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San Jose, CA, United States of America

Jeronimo Segovia Fernandez