Tel Solar Ag

Riber

Oerlikon Solar Ag, Trubbach

Jerome Villette

Hai Tran Quoc

Catherine Chaix

Valerick Cassagne

Disclosed is an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus includes a chamber, a cryogenic panel disposed inside the chamber, a sample holder able to support a substrate, a gas injector able to inject a gaseous precursor into the chamber, a first trap connected to the vacuum chamber and able to trap a part of the gaseous precursor released by the cryogenic panel, the first trap having a fixed pumping capacity S. The apparatus for depositing a thin film of material on a substrate includes a second trap having a variable pumping capacity Sable to be regulated in function of the gaseous precursor partial pressure, the first and second trap providing a total pumping capacity S=S+Ssufficient to maintain the gaseous precursor partial pressure in the vacuum chamber under a determined pressure P.

Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus

A method for manufacturing a poly- or microcrystalline silicon layer on an insulator comprises a silicon containing insulator, growing a thin adhesion promoting layer comprising amorphous silicon onto it and further growing a poly- or microcrystalline silicon layer onto the adhesion promoting layer. Such a sequence of layers, deposited with a PECVD method, shows good adhesion of the poly- or microcrystalline silicon on the base and is advantageous in the production of semiconductors, such as thin film transistors.

Adhesion layer for thin film transistors

For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a &#x3bc;c-Si layer () deposited on a large-surface substrate, () before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer ().

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Le Plessis Robinson, France

Jerome Villette