Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Crocus-technology Sa

Centre National De La Recherche Scientifique

Jerome Moritz

Bernard Dieny

Ioan Lucian Prejbeanu

Ricardo Sousa

Bernard Rodmacq

MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

MRAM element with low writing temperature

A thermally assisted magnetic writing device including a first magnetic layer known as the 'reference layer,' a second magnetic layer known as the 'storage layer' that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

Thermally assisted magnetic writing device

Growing community of inventors

St-Pierre-de-Bressieux, France

Jerome Moritz