Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Jérôme Le Perchec

Salim Boutami

Olivier Gravrand

Roch Espiau De Lamaestre

Gérard Destefanis

Mathieu Dupoy

Yohan Desieres

Giacomo Badano

Alexandre Mary

Philippe Voarino

Samuel Gall

Rémi Monna

Marc Pirot

Adeline Lanterne

A device for observing a sample includes a light source; an image sensor, comprising several pixels; and a microlens array comprising several convergent microlenses, each: microlens being disposed facing a pixel, each microlens comprising an image focus, each microlens being configured to form, from light waves being propagated in parallel incidence, a light wave beam converging towards the image focus of said microlens. The device is configured to hold the sample between the light source and the plurality of microlenses. The device includes several attenuating elements each attenuating element being associated with a microlens and with a pixel, each attenuating element being configured to attenuate the light waves converging towards the image focus of the lens with which it is associated.

Device for observing a sample by imaging

The invention relates to a sensor, including:

Device for measuring the refractive index of a fluid

A device having a transmission response with a maximum at a wavelength λ, this device including an intermediate layer which extends from a first optical filter to a second optical filter, this intermediate layer having a refractive index nat the wavelength λand a thickness h, the refractive index nbeing less than 3n/5 and the thickness hbeing between δ and 3δ, where the refractive index nis greater than 5n/3, where nis the greatest of the refractive indices chosen from the group consisting of the refractive indices at the wavelength λof the media situated at the interface with the first filter, and the coefficient δ is defined by the following relationship:1/δ=(2π/λ)((λ/())−1),where P is the period of a grating of slits of the first filter.

Optical filtering device

A detection component is provided for detecting electromagnetic radiation, the detection component comprising a mask arranged to block the electromagnetic radiation for at least one detector. The opaque mask comprises a successive stack of a first metal layer, a second metal layer, a third transparent layer having a low optical index, and an assembly of metal components. The second metal layer, the transparent layer, and the assembly of components form MIM structures in the wavelength range. The invention further relates to a method for manufacturing such a detection component.

Detection component including black pixels and method for manufacturing such a component

An electromagnetic radiation detector structure is adapted to detect electromagnetic radiation in at least one first given range of wavelengths centred around a first wavelength &#x3bb;. The detector structure comprises an absorption region of sub-wavelength thickness configured to absorb electromagnetic radiation, the absorption region having a refractive index n, and a Fabry-Perot cavity housing the absorption region. The disclosure further concerns a method to manufacture the detector structure.

Electromagnetic radiation detector structure having highly efficient absorption and method for manufacturing said structure

A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.

Method for manufacturing a photovoltaic cell with selective doping

A photovoltaic module including a plate transparent to the incident electromagnetic radiation, a photovoltaic cell including an active face arranged facing said transparent plate, a spectral conversion element including a luminescent material formed by at least a first spectral conversion area arranged facing a lateral face of the photovoltaic cell, a direct transmission area separating the transparent plate from the photovoltaic cell, the spectral conversion element including a second spectral conversion area extending the first spectral conversion area, the second spectral conversion area being positioned on the peripheral edge of the active face of the photovoltaic cell, so that the part of the active face of the photovoltaic cell directly receiving the incident electromagnetic radiation represents between 40% and 90% of the total surface of the active face of the photovoltaic cell.

Photovoltaic module comprising a localised spectral conversion element and production process

The invention relates to a monofrequency optical filter, including reflective elements which are formed on one surface of a dielectric support layer and which define at least one periodic array of parallel grooves passing across same. The periodicity, height, and width of said periodic groove array are selected so as to form a structure, the wavelength of which can be selected from within a predetermined range of wavelengths. According to the invention, the thickness and refractive index of the support layer are selected so that said layer forms a half-wave plate for a wavelength of the predetermined wavelength range. The filter, when in contact with the surface of the support layer opposite the surface on which the groove array is formed, includes a medium, the refractive index of which is less than that of the support layer so as to obtain a guided mode that resonates in the support layer.

Mono- or multifrequency optical filter, and detector comprising such a filter

This photodetector capable of detecting electromagnetic radiation comprises:

Photodetector with a plasmonic structure

This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.

The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio.

Photodetector having a very thin semiconducting region

Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a mirror above the semiconductor layer, and placed between the mirror and the semiconductor layer, a periodic grating of metallic patterns, the mirror and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.

Photodetector optimized by metal texturing provided on the rear surface

An integrated optical coupler including in the medium separating a first integrated waveguide from a second substantially parallel integrated waveguide, a succession of strips parallel to one another and orthogonal to the general direction of the waveguides, said strips being made of a material having an absorption preventing the propagation of an electromagnetic wave across its volume, and having:

Integrated optical coupler

An element of photodetection of a radiation having a wavelength in vacuum close to a value &#x3bb;, including:

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Grenoble, France

Jérôme Le Perchec